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Photo-Electrical Properties of Trilayer MoSe2 Nanoflakes
Yang Hang,Qi Li,Wei Luo,Yanlan He,Xueao Zhang,GANG PENG 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2016 NANO Vol.11 No.7
The photo-electrical properties of trilayer MoSe2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. The trilayer MoSe2 nanoflakes are n-type and possess a high gate modulation (On/Off ratio is larger than 10 5) and a relatively high carrier mobility (1.79 cm2 V-1 s-1). The field effect transistor (FET) device of MoSe2 shows sensitive photo response, high photoresponsivity (Rλ = 26.2 mA/W), quick response time (t < 20 ms), high external quantum efficiency (η = 5.1%) and high detection rate (D = 2.7 x 10 9 W-1) for red and near-infrared wavelength. These results showed that the device based on few-layer MoSe2 nanoflakes exhibited good photo-electrical properties, which might open a new way to develop few-layer MoSe2-based material in the application of FETs and optoelectronics.