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Y.G. Gudage,Ramphal Sharma 한국물리학회 2010 Current Applied Physics Vol.10 No.4
Cadmium selenide (CdSe) thin films have been electrochemically deposited on the stainless steel (SS) and fluorine-doped tin oxide (FTO) coated glass substrates at room temperature (27℃). The growth kinetics of CdSe thin films was studied by using cyclic voltammetry and chronoamperometry with variation in the pH of the electrolytic bath. In addition, the influence of the substrate on the microstructural properties of CdSe is plausibly explained. The photoelectrochemical (PEC) characterization of the film has been carried out to optimize the preparative parameters. X-ray diffraction data reveal growth of the cubic phase with preferential orientation along (1 1 1) direction. Compositional analysis of the film shows nearly stoichiometric film formation at pH 2.7. Uniform film formation with nano-sized grains was seen from SEM images. Optical absorption studies reveal that the pH of the electrolytic solution has a significant effect on the band gap of the film. PEC study revealed that CdSe film deposited at pH 2.7 on SS substrate showed better photosensitivity as compared to the film deposited on FTO coated glass.
Room-temperature gas sensing studies of polyaniline thin films deposited on different substrates
Deshpande, N G,Gudage, Y G,Devan, R S,Ma, Y R,Lee, Y P,Sharma, Ramphal Institute of Physics Publishing 2009 Smart materials & structures Vol.18 No.9
<P>Polyaniline thin films, doped with an inorganic acid (HCl), on glass and Si substrates were directly synthesized by an <I>in situ</I> polymerization technique. Studies on the surface morphology as well as topography proved that the film surface is evolved differently on different substrates. The formation of PANI on glass and Si substrates was confirmed by optical and infrared spectroscopy, respectively. Different surface characteristics for different substrates showed a strong effect on the gas sensing properties of these films. The porous fibril morphology on the Si substrate leads to significantly faster and more responsive sensing phenomena.</P>
Sharma, R.,Sagade, A.A.,Gosavi, S.R.,Gudage, Y.G.,Ghosh, A.,Kulariya, P.,Sulaniya, I.,Mane, R.S.,Han, S.H. North-Holland 2009 Journal of non-crystalline solids Vol.355 No.31
The copper chalcogenide (CuX, X=S, Se) thin films have been irradiated with 100MeV gold swift heavy ions (SHI) at 10<SUP>11</SUP> and 10<SUP>12</SUP> ions/cm<SUP>2</SUP> fluences. The irradiation effects were probed by characterizing physical properties such as XRD, AFM, optical band gap and electrical resistivity of copper chalcogenide thin films. The increase in irradiation fluence increases the particle size, electrical conductivity and PL intensity of the materials, and the optical band edges were red shifted. The results are explained by quantifying electronic energy loss of ions in both the materials.