http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Ultraviolet-Ozone Treatment for Effectively Removing Adhesive Residue on Graphene
Hang Yang,ShiQiao Qin,GANG PENG,Xiaoming Zheng,Xueao Zhang 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2016 NANO Vol.11 No.12
In this paper, we systematically investigated the influence of adhesive residue existing in deterministic transfer process upon graphene, and put forward a rapid and effective way named ultraviolet-ozone (UVO) treatment to reduce this negative effect. Results indicate that this adhesive residue may cause poor contact between metal and graphene, thus greatly degrading the performance of the device. However, this unpleasant influence could be reduced effectively by adopting UVO treatment. This work may be helpful to fabricate higher performance functional devices based on two-dimensional materials by removal of the adhesive residue.
Photo-Electrical Properties of Trilayer MoSe2 Nanoflakes
Yang Hang,Qi Li,Wei Luo,Yanlan He,Xueao Zhang,GANG PENG 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2016 NANO Vol.11 No.7
The photo-electrical properties of trilayer MoSe2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. The trilayer MoSe2 nanoflakes are n-type and possess a high gate modulation (On/Off ratio is larger than 10 5) and a relatively high carrier mobility (1.79 cm2 V-1 s-1). The field effect transistor (FET) device of MoSe2 shows sensitive photo response, high photoresponsivity (Rλ = 26.2 mA/W), quick response time (t < 20 ms), high external quantum efficiency (η = 5.1%) and high detection rate (D = 2.7 x 10 9 W-1) for red and near-infrared wavelength. These results showed that the device based on few-layer MoSe2 nanoflakes exhibited good photo-electrical properties, which might open a new way to develop few-layer MoSe2-based material in the application of FETs and optoelectronics.