http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Xianzhe Cheng (검색결과 3 건)
- 무료
- 기관 내 무료
- 유료
-
Out-of-plane spin polarization and antiferromagnetic spin Hall effect
Cheng Song,Xianzhe Chen,Xiaofeng Zhou,Hyunsoo Yang,Feng Pan 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.1
The discovery of the spin Hall effect (SHE) enabled the efficient generation and manipulation of the spin current. The magnetic spin Hall effect provides a unique opportunity to control the spin current and relevant device performance with controllable magnetization. In this talk, we report the magnetic spin Hall effect both in non-collinear antiferromagnet Mn<sub>3</sub>Pt and a collinear antiferromagnet Mn<sub>2</sub>Au. We generate tiny out-of-plane polarized spin current (σZ) when the charge current is applied along the axis perpendicular to the magnetic mirror plane of Mn<sub>3</sub>Pt/permalloy bilayers, but robust when the current is parallel to the magnetic mirror plane in all of the Mn<sub>3</sub>Pt films with different orientations. In Mn<sub>2</sub>Au, the spin currents are generated at two spin sublattices with broken spatial symmetry, and the antiparallel antiferromagnetic moments play an important role. Therefore, we term the Néel vector-dependent spin Hal effect the ‘antiferromagnetic spin Hall effect’ (AFM-SHE). The out-of-plane spins from the antiferromagnetic spin Hall effect are favorable for the efficient switching of perpendicular magnetized devices, which is required for high-density applications. The antiferromagnetic spin Hall effect adds another twist to the atomic-level control of spin currents via the antiferromagnetic spin structure.
-
Low-Cost Flexible Strain Sensor Based on Thick CVD Graphene
Bailiang Chen,Ying Liu,Guishan Wang,Xianzhe Cheng,Guanjun Liu,Jing Qiu,Kehong Lv 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2018 NANO Vol.13 No.11
Flexible strain sensors, as the core member of the family of smart electronic devices, along with reasonable sensing range and sensitivity plus low cost, have rose a huge consumer market and also immense interests in fundamental studies and technological applications, especially in the field of biomimetic robots movement detection and human health condition monitoring. In this paper, we propose a new flexible strain sensor based on thick CVD graphene film and its low-cost fabrication strategy by using the commercial adhesive tape as flexible substrate. The tensile tests in a strain range of ~30% were implemented, and a gage factor of 30 was achieved under high strain condition. The optical microscopic observation with different strains showed the evolution of cracks in graphene film. Together with commonly used platelet overlap theory and percolation network theory for sensor resistance modeling, we established an overlap destructive resistance model to analyze the sensing mechanism of our devices, which fitted the experimental data very well. The finding of difference of fitting parameters in small and large strain ranges revealed the multiple stage feature of graphene crack evolution. The resistance fallback phenomenon due to the viscoelasticity of flexible substrate was analyzed. Our flexible strain sensor with low cost and simple fabrication process exhibits great potential for commercial applications.
-
Xin Lin,Ying Liu,Yong Zhang,Peng Yang,Xianzhe Cheng,Jing Qiu,Guanjun Liu 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2019 NANO Vol.14 No.10
A polymer-assisted pressure sensor with piezoresistive suspended graphene is proposed and fabricated with high yield. Our sensor exhibits a good pressure response comparable to that of commercial sensors. The sensitivity is estimated to be 2.87 x 10 -5 kPa -1, higher than that of similar Si-based pressure sensors. The influence of the temperature on the sensor performance is systematically analyzed. An inverse temperature response is observed, and a nonnegligible temperature effect on the sensor resistance is demonstrated. Considering the temperature-induced cavity pressure change, a new temperature–resistance model is built to explain the nonlinearity of the sensor response to the temperature variation. Experiments under different test voltages show the influence of the current thermal effect, which is similar to that of temperature and nonnegligible for high-precision pressure sensors. Our new sensor holds great potential for practical application, and the findings on the temperature characteristics open up a route to further improve the sensor performance.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
