http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
20W Ultra wide-band Power Amplifier design Using Gallium Nitride High Electron Mobility Transistor
Jaewoo Sim(심재우),Jaeyeon Lim(임재연),Myoungkyu Park(박명규),Wenwoo Kang(강원우) 한국통신학회 2009 한국통신학회 학술대회논문집 Vol.2009 No.6
We report the design and performance of an ultra-broadband power amplifier. A 20Watt wideband power amplifier using GaN has been designed. It achieves 20 Watts output power with 12dB ± 1.0dB gain from 500 MHz to 2500 MHz at V<sub>DS</sub>=28V. At lower frequencies from 500 to 700 MHz the output power is 20 Watts with 40% efficiency. To achieve this performance, a broadband choke structure with a new technique was developed to obtain good isolation and low loss over the desired bandwidth. Input and output matching networks with shunt feedback topology were introduced. In order to improved efficiency of power amplifier, we employ a brief design concept to match impedance between Load impedance and 50 ohms. The new design concept has been also compared with Shunt feedback technique at an output power of 20W. The non-feedback amplifier shows a significantly improved return loss and size. The non-feedback amplifier also has an efficiency improved by 6 percent with gain increased by 2.3dB from 500MHz to 2.5GHz.