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Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients
Huh, Junghwan,Yun, Hoyeol,Kim, Dong-Chul,Munshi, A. Mazid,Dheeraj, Dasa L.,Kauko, Hanne,van Helvoort, Antonius T. J.,Lee, SangWook,Fimland, Bjørn-Ove,Weman, Helge American Chemical Society 2015 NANO LETTERS Vol.15 No.6
<P>Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p–n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2015/nalefd.2015.15.issue-6/acs.nanolett.5b00089/production/images/medium/nl-2015-00089f_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl5b00089'>ACS Electronic Supporting Info</A></P>
Chemical vapor deposition of graphene on platinum: Growth and substrate interaction
Nam, Jungtae,Kim, Dong-Chul,Yun, Hoyeol,Shin, Dong Hoon,Nam, Seungjin,Lee, Won Ki,Hwang, Jun Yeon,Lee, Sang Wook,Weman, Helge,Kim, Keun Soo Elsevier 2017 Carbon Vol.111 No.-
<P>Low-pressure chemical vapor deposition of graphene has been investigated on various Pt substrates such as e-beam deposited films, sputtered films, and polycrystalline foils. High temperature sputtering is found to be crucial in growing single layer graphene on Pt. It gives highly (111)-oriented crystallization with a significant reduction of dewetting in Pt films, in contrast to e-beam deposited Pt films. Graphene grown on high temperature sputtered Pt films is free of micro-sized multilayer graphene islands normally observed in graphene grown on polycrystalline Pt foils. This indicates that using Pt thin films can effectively suppress the multilayer graphene growth by carbon segregations and precipitations from the Pt bulk. Growth of single layer graphene is demonstrated on Pt films with a thickness down to 25 nm. Effects of the Pt substrates on the as-grown graphene have been investigated. An XY plot of the Raman G and 2D bands in graphene shows a correlation with the surface facet orientations of the Pt substrates measured by electron backscatter diffraction. With a general red shift of the G band distributions, a blue shift of the 2D band distributions is observed, which goes as high as similar to 2750 cm(-1) in graphene grown on Pt (111) films. (C) 2016 Elsevier Ltd. All rights reserved.</P>