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Mg-doped ZnO layer to enhance electron transporting for PbS quantum dot solar cells
Xing Meibo,Wei Yuyao,Wang Dandan,Shen Qing,Wang Ruixiang 한국물리학회 2021 Current Applied Physics Vol.21 No.-
In this work, the effect of Mg doping on the performance of PbS quantum dot (QD) solar cells (QDSCs) is investigated. To elucidate that, PbS QDSCs with pristine ZnO and Mg-doped ZnO (ZMO) as electron transporting layers (ETLs) are fabricated, respectively. The current density-voltage (J-V) measurements are performed. The results show that the cell efficiency of the device with ZMO as an ETL is 9.46%, which increases about 75% compared to that of the pristine ZnO based device (5.41%). Enhanced short current density (Jsc) and fill factor (FF) are observed. It is demonstrated that Mg doping could passivate the surface defects and suppress the carrier recombination in ZnO ETL, thus resulting in larger bandgap and higher Fermi level (EF). The strategy of Mgdoped ZnO ETL provides a promising way for pushing solar cell performance to a high level.