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Direct visualization and control of SrOx segregation on semiconducting Nb doped SrTiO3 (100) surface
유향근,Schwarz Daniel,Ulstrup Søren,Kim Woojin,Jozwiak Chris,Bostwick Aaron,노태원,Rotenberg Eli,Chang Young Jun 한국물리학회 2022 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.80 No.11
We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 μm in size and 1–5 unit cells thick nucleate frst and grow in a labyrinth domain pattern. After prolonged annealing, SrOx forms a ~ 10 nm thick flm. We show that the domain pattern can be controlled by introducing a surface miscut angle of SrTiO3. Additionally, the segregated SrOx has a lower work function, compared to that of SrTiO3. These results suggest that the control and tunability of SrOx segregation is applicable to the design of a new functional electronic devices in the semiconducting SrTiO3 based heterostructure.
Duvjir, Ganbat,Choi, Byoung Ki,Jang, Iksu,Ulstrup, Søren,Kang, Soonmin,Thi Ly, Trinh,Kim, Sanghwa,Choi, Young Hwan,Jozwiak, Chris,Bostwick, Aaron,Rotenberg, Eli,Park, Je-Geun,Sankar, Raman,Kim, Ki-Seo American Chemical Society 2018 NANO LETTERS Vol.18 No.9
<P>Emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed. However, the role of these phenomena in shaping the electronic properties in van der Waals heterointerfaces has hitherto not been established. By reducing the material thickness and forming a heterointerface, we find two types of charge-ordering transitions in monolayer VSe<SUB>2</SUB> on graphene substrates. Angle-resolved photoemission spectroscopy (ARPES) uncovers that Fermi-surface nesting becomes perfect in ML VSe<SUB>2</SUB>. Renormalization-group analysis confirms that imperfect nesting in three dimensions universally flows into perfect nesting in two dimensions. As a result, the charge-density wave-transition temperature is dramatically enhanced to a value of 350 K compared to the 105 K in bulk VSe<SUB>2</SUB>. More interestingly, ARPES and scanning tunneling microscopy measurements confirm an unexpected metal-insulator transition at 135 K that is driven by lattice distortions. The heterointerface plays an important role in driving this novel metal-insulator transition in the family of monolayer transition-metal dichalcogenides.</P> [FIG OMISSION]</BR>