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      • KCI등재후보

        High-efficiency blue and white phosphorescent organic light-emitting devices

        Shizuo Tokito,Toshimitsu Tsuzuk,Fumio Sato,Toshiki Iijima 한국물리학회 2005 Current Applied Physics Vol.5 No.4

        We have signicantly improved the eciency of blue and white phosphorescence from organic light-emitting devices (OLEDs)based on phosphorescent iridium complexes. To improve the emission eciency, 4,40-Bis(9-carbazolyl)-2,20-Dimethyl-biphenyl(CDBP), which has a high triplet energy, was used as the carrier-transporting host for the emissive layer. The blue phosphorescentOLED exhibited a maximum external quantum eciency of 10.4%, which corresponds to a current eciency of 20.4 cd/A. Thisresult can be explained as due to the ecient connement of triplet energy on blue phosphorescent molecules, which is consistentwith the results of transient photoluminescence experiments. The white phosphorescent OLED with greenish-blue and red emissivelayers exhibited a maximum external quantum eciency of 12% and a luminous eciency of 18 cd/A. This is primarily attributed tothe improvement of greenish-blue emission eciency as well as the emission eciency of the blue phosphorescent OLED..

      • Three-Dimensional, Inkjet-Printed Organic Transistors and Integrated Circuits with 100% Yield, High Uniformity, and Long-Term Stability

        Kwon, Jimin,Takeda, Yasunori,Fukuda, Kenjiro,Cho, Kilwon,Tokito, Shizuo,Jung, Sungjune American Chemical Society 2016 ACS NANO Vol.10 No.11

        <P>In this paper, we demonstrate three-dimensional (3D) integrated circuits (ICs) based on a 3D complementary organic field-effect transistor (3D-COFET). The transistor-on-transistor structure was achieved by vertically stacking a p-type OFET over an n-type OFET with a shared gate joining the two transistors, effectively halving the footprint of printed transistors. All the functional layers including organic semiconductors, source/drain/gate electrodes, and interconnection paths were fully inkjet-printed except a parylene dielectric which was deposited by chemical vapor deposition. An array of printed 3D-COFETs and their inverter logic gates comprising over 100 transistors showed 100% yield, and the uniformity and long-term stability of the device were also investigated. A full-adder circuit, the most basic computing unit, has been successfully demonstrated using nine NAND gates based on the 3D structure. The present study fulfills the essential requirements for the fabrication of organic printed complex ICs (increased transistor density, 100% yield, high uniformity, and long-term stability), and the findings can be applied to realize more complex digital/analogue ICs and intelligent devices.</P>

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