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High Temperature Capacitors using a BiScO_3-BaTiO_3-(K_(1/2)Bi_(1/2))TiO_3 Ternary System
Jong Bong Lim,Shujun Zhang,Thomas R. Shrout 대한금속·재료학회 2011 ELECTRONIC MATERIALS LETTERS Vol.7 No.1
BiScO_3-BaTiO_3 with (K_(1/2)Bi_(1/2))TiO_3 [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCεs). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm^3 at 100 kV/cm for the BSBT-KBT20.