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        Physical Preparation and Optical Properties of CuSbS2 Nanocrystals by Mechanical Alloying Process

        Huihui Zhang,Qishu Xu,Guolong Tan 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.5

        CuSbS2 nanocrystals have been synthesized through mechanical alloying Cu,Sb and S elemental powders for 40 hs. The optical spectrum of as-milledCuSbS2 nano-powders demonstrates a direct gap of 1.35 eV and an indirectgap of 0.36 eV, which are similar to that of silicon and reveals the evidence forthe indirect semiconductor characterization of CuSbS2. Afterwards, CuSbS2nanocrystals were capped with trioctylphosphine oxide/trioctylphosphine/pyridine (TOPO/TOP). There appear four sharp absorption peaks within theregion of 315 to 355 nm for the dispersion solution containing the cappednanocrystals. The multiple peaks are proposed to be originating from theenergy level splitting of 1S electronic state into four discrete sub-levels, whereelectrons were excited into the conduction band and thus four excitonabsorption peaks were produced.

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        Dielectric properties and thermal conductivity of Si3N4–SiC composite ceramics

        Zang Xiangrong,Li Haiqing,Lu Yanping,Tan Huihui,Ji Huanli,Yan Ming,Liu Zheng 한국세라믹학회 2022 한국세라믹학회지 Vol.59 No.6

        In this work, Si 3N4–SiC composite ceramics were prepared by hot pressing sintering with Y 2O3–MgO–Al2O3 as sintering additives in a fl owing nitrogen atmosphere. The crystal structure and microstructure of Si 3N4–SiC specimens with diff erent SiC content were studied. The XRD results show that the peaks of β-Si 3N4 and SiC were displayed and matched well on XRD patterns. Si 3N4 particles were basically long rod-shaped. Besides, the eff ects of SiC content on thermal conductivity and dielectric properties in W band (75–110 GHz) of sintered Si 3N4–SiC ceramics were researched. The dielectric constant fi rst decreased then increased with the increase of SiC content, while the trend of dielectric loss (tg δ) was opposite. The dielectric constant of Si 3N4–SiC composites for 35 wt% SiC reached a minimum range of 13–20 and tg δ values reached a maximum range of 0.72–0.96 in the frequency of 75–110 GHz. Meanwhile, the thermal conductivity of Si 3N4–SiC composites for 35 wt% SiC was 63.008 W/(m K) at room temperature. The variation of thermal conductivity as test temperature was also studied. The thermal conductivity decreased with increasing test temperature. When the test temperature was 300 °C, the thermal conductivity of the Si 3N4–SiC ceramics for 35 wt% SiC content was 36.022 W/(m K). The Si 3N4–SiC composite ceramics were expected to be applied as microwave absorbing materials.

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