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      저자 : Taizoh Sadoh (검색결과 1 건)
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        Ge Fraction Dependence of Al-Induced Crystallization of SiGe at Low Temperatures

        Masashi Kurosawa,Yoshitaka Tsumura,Taizoh Sadoh,Masanobu Miyao 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1

        Al-induced crystallization of Si<SUB>1-x</SUB>Ge<SUB>x</SUB> films (x = 0 - 0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on insulating lms at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 ℃, 20 h) and inversion of Si/Al layers occurred completely. For Si<SUB>1-x</SUB>Ge<SUB>x</SUB> samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures. Al-induced crystallization of Si<SUB>1-x</SUB>Ge<SUB>x</SUB> films (x = 0 - 0.5) has been investigated by using amorphous SiGe (a-SiGe)/Al structures to realize polycrystalline SiGe (poly-Si) layers on insulating lms at low temperatures. For the Si sample, poly-Si oriented to the (111) direction was formed after annealing (450 ℃, 20 h) and inversion of Si/Al layers occurred completely. For Si<SUB>1-x</SUB>Ge<SUB>x</SUB> samples (x > 0), the layer exchange occurred in partial areas and poly-SiGe with the (111) orientation was grown only in the exchanged areas. The Ge fractions of the crystallized SiGe were almost the same as those of the initial a-SiGe layers. The diameters of the crystallized areas decreased from ∼100 (x = 0) to ∼30 μm (x = 0.5) with increasing Ge fraction. This technique can be utilized for the formation of high-quality poly-SiGe at low temperatures.

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