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Design and Fabrication of a Low-Noise Amplifier for the V-Band
Tae-SinKang,Seong-DaeLee,Bok-HyoungLee,Sam-DongKim,Hyun-ChangPark,Hyung-MooPark,이진구 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.4
Millimeter-wave monolithic integrated circuit (MIMIC)-based V-band low-noise amplifiers (LNA) were fabricated using high-performance 0.1-$\mu$ $\Gamma$-shaped pseudomorphic high electron mobility transistors (PHEMT's), coplanar waveguide structures, and an integrated process for passive and active devices. The LNA was designed in a chip size of 2.3$\times$1.4 mm$^2$ by using 2-stage PHEMT's with two 70-$\mu$m fingers. A high $S_{21}$ gain of 14.9 dB and good matching at 60 GHz were achieved from the circuits, and a 20-dBm IP3 and 6.7-dB $NF_{min}$ were obtained from the LNA's.