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Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors
Samuel, T.S.Arun,Balamurugan, N.B.,Sibitha, S.,Saranya, R.,Vanisri, D. The Korean Institute of Electrical Engineers 2013 Journal of Electrical Engineering & Technology Vol.8 No.6
In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.
Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors
T.S.Arun Samuel,N.B.Balamurugan,S.Sibitha,R.Saranya,D.Vanisri 대한전기학회 2013 Journal of Electrical Engineering & Technology Vol.8 No.6
In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.
T.S.Arun Samuel,N.B.Balamurugan 대한전기학회 2014 Journal of Electrical Engineering & Technology Vol.9 No.1
In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.
T.S.Arun Samuel,N.B.Balamurugan,T.Niranjana,B.Samyuktha 대한전기학회 2014 Journal of Electrical Engineering & Technology Vol.9 No.2
In this paper, a new two dimensional (2D) analytical modeling and simulation for a surrounding gate tunnel field effect transistor (TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunneling generation rate and thus we numerically extract the tunneling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.
Samuel, T.S. Arun,Balamurugan, N.B.,Niranjana, T.,Samyuktha, B. The Korean Institute of Electrical Engineers 2014 Journal of Electrical Engineering & Technology Vol.9 No.2
In this paper, a new two dimensional (2D) analytical modeling and simulation for a surrounding gate tunnel field effect transistor (TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunneling generation rate and thus we numerically extract the tunneling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.
Arun Samuel, T.S.,Balamurugan, N.B. The Korean Institute of Electrical Engineers 2014 Journal of Electrical Engineering & Technology Vol.9 No.1
In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.