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T. Muranaka,T. Uehara,T. Sakano,Y. Nabetani,T. Akitsu,T. Kato,T. Matsumoto,S. Hagihara,O. Abe,S. Hiraki,Y. Fujikawa 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Ga-doped zinc-oxide (GZO) films grown at various Ga/Zn supply ratios were prepared on glass substrates by using plasma-assisted molecular beam deposition. The films were carefully characterized by using Hall, X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. At low Ga/Zn supply ratios, the carrier density systematically increased with increasing Ga/Zn supply ratio. However, a saturation of the carrier density near 4 − 6 × 1020 cm−3 was observed when the Ga/Zn supply ratio was in the range from 5 × 10−5 % to 0.5 %. From TEM observations, uniform crystal grains were observed to grow with low-angle tilt grain boundaries in GZO films with low doping. On the other hand, high-angle tilt grain boundaries were observed in the highly-doped GZO films. A detailed selected area electron diffraction (SAED) analysis revealed that such non-uniformity in the highly-doped GZO films appears during the initial growth stage.
Magneto-Optical Properties of ZnMnSe-ZnSe-ZnCdSe Quantum Structures
T. Kato and T. Matsumoto,M. Ito,M. Tajima,K. Omori,T. Muranaka,Y. Nabetani,T. Matsumoto 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
We have studied the circularly polarized photoluminescence (PL) and reflectance properties of a series of ZnSe/ZnCdSe/ZnSe/ZnMnSe single quantum wells (SQWs) and ZnSe/ZnCdSe/ ZnSe/ZnCdMnSe /ZnSe coupled double quantum wells (DQWs). The degree of circular polarization of the exciton luminescence from the ZnCdSe non-magnetic semiconductor (NMS) well was studied as a function of the spacer layer thickness and the exciton energies in the NMS and the diluted magnetic semiconductor (DMS) regions. The polarization degree became larger as the spacer thickness became smaller. The polarization also depended on the excito n energies in the NMS and the DMS regions and became larger as the exciton energy in the nCdSe well became closer to that in the DMS layer or the DMS well.
T. Muranaka,A. Nisii,T. Uehara,T. Sakano,Y. Nabetani,T. Akitsu,T. Kato and T. Matsumoto,T. Matsumoto,S. Hagihara,O. Abe,S. Hiraki,Y. Fujikawa 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
Ga-doped zinc-oxide (GZO) films grown under various Ga/Zn supply ratios were carefully characterized by using Hall measurements and optical transmittance measurements to investigate the electrical and the optical properties of the GZO films on glass, polyethylene terephthalate (PET), and polycarbonate (PC) substrates. The resistivity of the GZO films grown at 290 ℃ on glass substrates ranged from 4 × 10-2 cm to 3 × 10-4 cm for Ga/Zn supply ratios from 0 % to 0.5 %. The growth of the GZO films at a low temperature of 90 ℃ was also performed on glass, PET, and PC substrates. When the Ga/Zn supply ratios were 0.05 - 0.1 %, the 90 ℃-grown GZO films on glass substrates showed resistivities similar to those of 290 ℃-grown GZO films. The 90 ℃-grown GZO films on PET and PC substrates showed resistivities of 1 × 10-3 cm and 4 × 10-4 cm, respectively. The Hall carrier density was 8 × 1020 cm-3, which was almost the same value as that of the 90 ℃-grown GZO films on glass substrates. The GZO films on PET and PC substrates also showed visible transparency as good as that of the GZO films on glass substrates, and the average transmittance in the visible region was higher than 85 %.