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T. Kanashima,M. Okuyama,H. Kanda,K. Ikeda,M. Sohgawa 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
High-k thin lms of ZrO2, PrOx of 10 nm thickness have been prepared by pulsed laser deposition, and characterized in microscopic structure and electrical properties. Crystallization is promoted in ZrO2 lms deposited above 400 C, but a signicant XRD peak was not observed in the ZrO2 lm grown below 400 C. The leakage current is decreased by increasing growth temperature, but an equivalent-oxide thickness (EOT) obtained from accumulation capacitance of C .. V characteristics becomes large. The lms deposited at 400 C were annealed at 400 C in O2 gas to reduce the leakage. The leakage current change to be small, but the EOTs become large. Oxygen radical annealing is carried out to reduced the leakage, and is eective for ZrO2 thin lm. On the other hand, only small improvement is observed in the PrOx lms.
M. Sohgawa,M. Yoshida,M. Okuyama,T. Kanashima 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
SrBi2Ta2O9 (SBT)/SiO2/Si structures have been characterized by photore ectance spectroscopy (PRS) without electrode formation. SBT lm was deposited on SiO2/n-Si by the metal-organic decomposition (MOD) method and annealed in O2 atmosphere at 600 C. The voltage was applied by attaching ITO transparent electrodes during PRS measurement. The PRS spectral intensity of SBT/SiO2/Si structure has hysteresis characteristics as well as a C-V curve. Additionally, the spectral intensity gradually decreases with time, in a similar way to reduction of the capacitance. These results mean that the spectral intensity indicates the ferroelectricity of SBT flm in SBT/SiO2/Si structure, so that it is considered that characterization of MFIS structure without electrode can be measured by PRS.