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RISS 인기검색어
- 검색키워드
- 저자 : Sunil Ojha (검색결과 3 건)
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Evaluation of Ylang Ylang essential oil on alcohol induced hepatotoxicity in rats
Siddarth Sunil Tubachi,V. P. Rasal,Sanjay R. Ugare,Nayeem A. Khatib,Prachi Sanjeev Ojha,Vishal S. Patil 경희대학교 융합한의과학연구소 2023 Oriental Pharmacy and Experimental Medicine Vol.23 No.2
The present study is aimed to evaluate the effect of ylang ylang essential oil in alcohol induced hepatotoxicity in rats. Alcohol was used as an inducing agent and Silymarin as a standard molecule. Body weight was measured at a 3 days interval till the twenty first day and at the end of the study, serum AST, ALT, TP, TC, TG, and TB biomarkers were estimated. Further, the liver tissue was evaluated for antioxidant enzymes namely CAT, LPO, SOD and GSH level. Liver weight and histopathology was accessed at the end. Phytocompounds were shortlisted from literature and curated databases. Probable targets of each compound were identified using the SwissTargetPrediction web server. Probable mechanisms of phytocompounds against Alcohol induced hepatotoxicity were analyzed by the STRING and KEGG pathway database. The network between compounds, targets, and pathways was generated via Cytoscape ver. 3.6.1. Docking was performed by AutoDock vina using PyRx0.8v. YYEO group showed increased BW compared to alcohol group and also reversed the increased serum AST, ALT, TP, TC, TG, and TB biomarkers and also increased the level of antioxidant enzymes compared to alcohol induced group. YYEO 400 mg/kg exhibited normal liver weight and histology compared to alcohol. Enrichment and network analysis identified YYEO 63 compounds as beneficial modulators of protein molecules associated with hepatotoxicity via modulating Toll-like receptor, Adipocytokine, TNF, Sphingolipid, FoxO, AMPK, Relaxin, MAPK, NF-kappa B, HIF-1, Fc epsilon RI, IL-17, VEGF, T cell receptor, NOD-like receptor, mTOR, PI3K- Akt signaling pathway, etc. Canangaterpene 1 was identified as a potent inhibitor of aldose reductase.
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Rohit Sharma,Ashish Kumar,Anit Dawar,Sunil Ojha,Ambuj Mishra,Anshu Goyal,Radhapiyari Laishram,V. G. Sathe,RITU SRIVASTAVA,Om Prakash Sinha 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.2
Field effect transistors (FETs) are considered as the backbone of electronic industry. In this study, we adopted a simple drop cast method for the fabrication of MoS2 and WS2 channel based FET on commercially available pre-patterned OFET devices. The synthesis of few-layers thick MoS2 and WS2 nanosheets (NSs) has been done by solvent-assisted exfoliation method. FESEM and TEM study reveals that NSs have lateral dimensions in micron and have polycrystalline nature. From XPS, it is observed that MoS2 NSs has 2H phase whereas WS2 have hybrid 1T and 2H phase. The frequency difference in Raman vibrational mode for MoS2 and WS2 NSs is 24.08 cm-1 and 63.84 cm-1 respectively, confirms that number of layers is reduced after sonication. UV-visible spectroscopy reveals that the bandgap is 1.7 eV and 1.8 eV for MoS2 and WS2 NSs respectively. Later, these nanosheets have been drop-casted as the channel material on pre-patterned FETs devices and their output and transfer characteristics have been studied. It found that the current On/Off ratio is 10 4 and 10 3 for MoS 2 and WS2-FET device respectively. This facile fabrication of FET devices may provide a new stage for researchers who do not have access of lithography facilities for FET fabrication.
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Tuning of ripple patterns and wetting dynamics of Si (100) surface using ion beam irradiation
Tanuj Kumar,U.B. Singh,Manish Kumar,Sunil Ojha,D. Kanjilal 한국물리학회 2014 Current Applied Physics Vol.14 No.3
Ripple patterns on Si (100) surface have been fabricated using 200 keV Arþ oblique ion beam irradiation. Dynamical evolution of patterns is studied for the fluences ranging from 3 1017 ions/cm2 to 3 1018 ions/cm2. AFM study reveals that the exponential growth of roughness with stable wavelength of ripples up to higher fluence values is lying in the linear regime of Continuum models. Stylus Profilometer measurement was carried out to emphasize the role of sputtering induced surface etching in ripple formation. Rutherford Backscattering Spectroscopy shows the incorporation of Ar in the near surface region. Observed growth of ripples is discussed in the framework of existing models of surface patterning. Role of ion beam sputtering induced surface etching is emphasized in formation of ripples. In addition, the wetting study is performed to demonstrate the possibility of engineering the hydrophilicity of ripple patterned Si (100) surface.
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