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Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors
Samuel, T.S.Arun,Balamurugan, N.B.,Sibitha, S.,Saranya, R.,Vanisri, D. The Korean Institute of Electrical Engineers 2013 Journal of Electrical Engineering & Technology Vol.8 No.6
In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.
Analytical Modeling and Simulation of Dual Material Gate Tunnel Field Effect Transistors
T.S.Arun Samuel,N.B.Balamurugan,S.Sibitha,R.Saranya,D.Vanisri 대한전기학회 2013 Journal of Electrical Engineering & Technology Vol.8 No.6
In this paper, a new two dimensional (2D) analytical model of a Dual Material Gate tunnel field effect transistor (DMG TFET) is presented. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expressions for surface potential and electric field are derived. The electric field distribution can be used to calculate the tunneling generation rate and numerically extract tunneling current. The results show a significant improvement of on-current and reduction in short channel effects. Effectiveness of the proposed method has been confirmed by comparing the analytical results with the TCAD simulation results.