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Preparation and Photoelectric Properties of Silver Nanowire/ZnO Thin Film Ultraviolet Detector
Zhenfeng Li,Wei Xiao,Hongzhi Zhou,Zhiyuan Shi,Rongqing Li,Jia Zhang,Yang Li,Peng He,Shuye Y. Zhang 대한금속·재료학회 2023 ELECTRONIC MATERIALS LETTERS Vol.19 No.5
Ultraviolet (UV) detectors have important applications in many fi elds. ZnO is an excellent semiconductor material for the preparation of UV detectors because of its large direct gap in forbidden bandwidth, its intrinsic response band in the UV region, and its high exciton binding energy. In this paper, high-performance ZnO thin fi lms with the optically advantageous nonpolar structure were prepared by using an atomic layer deposition, and the dominant crystal plane gradually changes from the amorphous phase to the (100) crystal plane. The conventional photoconductor structure ZnO UV detector was enhanced by the surface plasmon exciton eff ect of Ag nanostructure. When the operating voltage is 5 V and the response light is 350 nm, there is a maximum optical responsiveness of up to 131 A/W. The UV/visible rejection ratio can reach 1824 times. When the ZnO thin fi lm deposition thickness is 400 deposition cycles and about 72 nm, the ZnO thin fi lm UV detector obtains the highest responsiveness (5 V, 365 nm) of 365 A/W. Comparing the photovoltaic performance of the ZnO thin-fi lm detector with the enhanced ZnO thin-fi lm detector and its optimal response wavelength, it is found that the enhanced ZnO thin-fi lm detector increased the photoresponse value by about 100 times. The optimal response wavelength in the UV region is blueshifted, and the UV-visible rejection ratio and optical response rate are signifi cantly improved.
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