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Effect of 3C-SiC Intermediate Layer in GaN-Based Light Emitting Diodes Grown on Si(111) Substrate
Youhua Zhu,Meiyu Wang,Yi Li,Shuxin Tan,Honghai Deng,Xinglong Guo,Haihong Yin,Takashi Egawa 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.2
GaN-based light emitting diodes (LEDs) have been grown by metalorganicchemical vapor deposition on Si(111) substrate with and without3C-SiC intermediate layer (IL). Structural property has been characterizedby means of atomic force microscope, X-ray diffraction, andtransmission electron microscope measurements. It has been revealedthat a significant improvement in crystalline quality of GaN and superlatticeepitaxial layers can be achieved by using 3C-SiC as IL. Regardingof electrical and optical characteristics, it is clearly observed that theLEDs with its IL have a smaller leakage current and higher light outputpower comparing with the LEDs without IL. The better performance ofLEDs using 3C-SiC IL can be contributed to both of the improvementsin epitaxial layers quality and light extraction efficiency. As aconsequence, in terms of optical property, a double enhancement of thelight output power and external quantum efficiency has been realized.