http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Shunsuke Fukami (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
Electrical manipulation of non-collinear antiferromagnet
Shunsuke Fukami 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.1
Electrical manipulation of magnetic materials has been of paramount interest in spintronics community for the last quarter century. Earlier studies focused on ferromagnetic materials and demonstrated magnetization switching, phase transition between ferromagnetism and para-magnetism, oscillation, resonance, and so on [1]. Among them, the spin-transfer torque induced magnetization switching has evolved into an essential ingredient in magneto resistive random access memory technology, and other phenomena are also expected to be useful for new functional devices. In 2016, electrical manipulation of collinear antiferromagnet CuMnAs was demonstrated, where staggered spin-orbit torque was utilized [2]. Since the antiferromagnetic materials have been believed to have less chance of applications due to the difficulty to control the internal state, this study renewed the perception of spintronics research and opened a new paradigm, so-called antiferromagnetic spintronics. Besides, a very recent study [3] reported an electrical switching of non-collinear antiferromagnet, another type of antiferromagnets with chiral-spin structure exhibiting intriguing properties that was believed to be observed only in ferromagnets [4], where the observed phenomenon was explained by the same protocol with the spin-orbit torque induced switching of ferromagnetic materials [5,6]. So far, however, unique properties and functionalities of non-collinear antiferromagnet have not been unraveled. Here I show a chiral-spin rotation in non-collinear antiferromagnet Mn3Sn driven by the spin-orbit torque [7]; the phenomenon has no parallel in the research history of spintronics. We prepare cross-shaped Hall devices made of an epitaxial W/Ta/Mn3Sn/Pt stack [8] and investigate the response of Hall resistance to the lateral current. We observe a characteristic fluctuation of the Hall resistance above a certain threshold, which can be consistently explained by considering persistent rotation of chiral-spin structure induced by the spin-orbit torque. We also find that the efficiency to manipulate the spin structure in this scheme is much higher than that in ferromagnet and collinear antiferromagnet.
-
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
