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- 저자 : Shigeru Kaku (검색결과 2 건)
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Shigeru Kaku,Satoshi Miyauchi,Yukio Watanabe 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.2
We report the nanoscopic properties of the clean, free surface of a BaTiO3 single crystal in an ultra-high vacuum. Atomic force microscopy, piezoelectric force microscopy and Kelvin force microscopy measurements show that the potential difference between upward and downward 180˚ domain is approx 100 mV. This value is 100 times smaller than the value estimated by using the standard 180˚ domain theory. Furthermore, our experiments show that this result cannot be explained only by the conventional explanations (that is, a decrease in the depolarization field by closure domains, the compensation of polarization bound charge by contamination or by oxygen excess and deficiency or ion transport). The results suggest a possibility that an intrinsic electrostatic shielding mechanism exists in the ferroelectrics and is essential for 180˚ domains. We report the nanoscopic properties of the clean, free surface of a BaTiO3 single crystal in an ultra-high vacuum. Atomic force microscopy, piezoelectric force microscopy and Kelvin force microscopy measurements show that the potential difference between upward and downward 180˚ domain is approx 100 mV. This value is 100 times smaller than the value estimated by using the standard 180˚ domain theory. Furthermore, our experiments show that this result cannot be explained only by the conventional explanations (that is, a decrease in the depolarization field by closure domains, the compensation of polarization bound charge by contamination or by oxygen excess and deficiency or ion transport). The results suggest a possibility that an intrinsic electrostatic shielding mechanism exists in the ferroelectrics and is essential for 180˚ domains.
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Resistance Switching in View of Electron Hole Dynamics in Ferroelectric Related Oxides
Yukio Watanabe,Daisuke Matusmoto,Mizuki Yamato,Shigeru Kaku 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.2I
An examination of typical switching experiments shows that the performances of the resistance switching in transition-metal oxides vary widely and depend on the details of each experiment. Conventional defect mechanisms, such as oxygen vacancies, work in some experiments. However, by comparing the macroscopic and the nanometer-scale characteristics and switching, we show here that other experiments indicate the possible existence of a more intrinsic physically new mechanism.VISITOR=Gzm-G
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