http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Radiation effect on the polymer-based capacitive relative humidity sensors
Shchemerov I.V.,Legotin S.A.,Lagov P.B.,Pavlov Y.S.,Tapero K.I.,Petrov A.S.,Sidelev A.V.,Stolbunov V.S.,Kulevoy T.V.,Letovaltseva M.E.,Murashev V.N.,Konovalov M.P.,Kirilov V.N. 한국원자력학회 2022 Nuclear Engineering and Technology Vol.54 No.8
The sensitivity of polymer-based capacitive relative humidity (RH) sensors after irradiation with neutrons, electrons and protons was measured. Degradation consists of the decreasing of the upper RH limit that can be measured. At the same time, low RH-level sensitivity is almost stable. After 30 krad of absorption dose, RH cut off is equal to 85% of max value, after 60 krade40%. Degradation reduces after annealing which indicates high radiation sensitivity of the internal circuit in comparison to RH-sensing polymer film
Current relaxation analysis in AlGaN/GaN high electron mobility transistors
Polyakov, Alexander Y.,Smirnov, N. B.,Shchemerov, Ivan V.,Lee, In-Hwan,Jang, Taehoon,Dorofeev, Alexey A.,Gladysheva, Nadezhda B.,Kondratyev, Eugene S.,Turusova, Yulia A.,Zinovyev, Roman A.,Turutin, A. American Institute of Physics 2017 Journal of Vacuum Science & Technology. B Vol.35 No.1
Quantum Barrier Growth Temperature Affects Deep Traps Spectra of InGaN Blue Light Emitting Diodes
Polyakov, A. Y.,Smirnov, N. B.,Shchemerov, I. V.,Yakimov, E. B.,Yakimov, E. E.,Kim, Kyu Cheol,Lee, In-Hwan The Electrochemical Society 2018 ECS journal of solid state science and technology Vol.7 No.5
<P>Electroluminescence (EL) efficiency, deep electron and hole traps spectra, microcathodoluminescence (MCL), electron beam induced current (EBIC) imaging, and MCL spectra were studied for blue GaN/InGaN multi-quantum-well (MQW) light emitting diodes differing by the temperature at which the GaN barriers of the MQW active region were grown. It was found that increasing the growth temperature from 850 to 920 degrees C very strongly suppressed the formation of deep electron traps with level at E-c-1 eV in the GaN barriers and of the hole traps with levels at E-v+0.7eV in InGaN QWs. The suppression of the formation of the E-c-1 eV electron trap, a known prominent nonradiative recombination center in n-GaN, improved the carrier injection efficiency into the InGaN QWs and increased the external quantum efficiency by about 9%. EBIC and MCL imaging showed that the density of threading dislocations and terminating them V-pits was relatively low and similar for both studied growth temperatures, close to 10(8) cm(-2) . The cross-sectional dimensions of the V-pits were measurably higher for increased growth temperature. However, the rather low dislocation density and rather high dimensions of the V-pits were believed to result in minor contribution of these defects to the observed EL efficiency changes. (C) 2018 The Electrochemical Society.</P>
Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes
Lee, In-Hwan,Polyakov, A. Y.,Smirnov, N. B.,Shchemerov, I. V.,Chung, Tae-Hoon,Lagov, P. B.,Zinov'ev, R. A.,Pearton, S. J. The Electrochemical Society 2017 ECS journal of solid state science and technology Vol.6 No.10
<P>Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 10<SUP>15</SUP> cm<SUP>−2</SUP>, electron irradiation increased the concentration of existing electron traps with levels at E<SUB>c</SUB>−0.5 eV and introduced new electron traps with levels near E<SUB>c</SUB>−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the E<SUB>c</SUB>−0.5 eV and E<SUB>c</SUB>−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near E<SUB>v</SUB>+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.</P>
Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs
Lee, In-Hwan,Polyakov, A. Y.,Hwang, Sung-Min,Shmidt, N. M.,Shabunina, E. I.,Tal'nishnih, N. A.,Smirnov, N. B.,Shchemerov, I. V.,Zinovyev, R. A.,Tarelkin, S. A.,Pearton, S. J. American Institute of Physics 2017 Applied Physics Letters Vol.111 No.6