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Banu, Shahara,Cho, Yunae,Kim, Kihwan,Ahn, Seung Kyu,Gwak, Jihye,Cho, Ara Elsevier 2019 Solar energy Vol.188 No.-
<P><B>Abstract</B></P> <P>CuSbS<SUB>2</SUB> (CAS) thin films were deposited via a non-vacuum hybrid ink method onto a Mo/soda lime glass (SLG) substrate. To fabricate the CAS films, Cu-Sb precursors were spin coated and then annealed with sulfur powder. During annealing, different amounts of sulfur powder were used to control the crystal orientation of the films. X-ray diffraction (XRD) patterns were employed to examine the crystal orientation by calculating the texture co-efficient and Lotgering factor. It was found that the S-flux amount during sulfurization was a critical parameter for controlling the crystal orientation and phase transition of the CAS structure. Originally, CAS has an orthorhombic structure; however, if the S-flux was higher than the optimum, a pseudo-phase transition from orthorhombic to cubic was observed. In addition, the electrical characteristics and defect properties were conducted for the solar cells prepared with various S-flux to understand the difference in the photovoltaic performances affected by the structural change. Admittance spectroscopy revealed that the defect levels were shallower in the CAS solar cell with an orthorhombic structure, which could have contributed to the better photovoltaic performance than that of the cubic structure. The CAS solar cell deposited with low S-flux exhibited dominant V<SUB>S</SUB> <SUP>2+</SUP> defects; however, for excessive S-flux, Cu<SUB>Sb</SUB> <SUP>2−</SUP> became prominent.</P> <P><B>Highlights</B></P> <P> <UL> <LI> A pseudo-phase transition of CuSbS<SUB>2</SUB> from orthorhombic to cubic was observed for excess S-flux. </LI> <LI> Role of S-flux on structural and defect properties of CuSbS<SUB>2</SUB> thin films were studied. </LI> <LI> Orthorhombic CuSbS<SUB>2</SUB> showed shallower defect energy levels than that of cubic structure. </LI> <LI> Therefore, orthorhombic CuSbS<SUB>2</SUB> photovoltaic cells showed improved PV performances. </LI> </UL> </P>
Cho, Ara,Banu, Shahara,Cho, Yunae,Ahn, Seung Kyu,Yun, Jae Ho,Cho, Jun-Sik Elsevier 2019 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.185 No.-
<P><B>Abstract</B></P> <P>Hybrid inks with a chelating agent were prepared and coated by a spin-coating method to form Cu<SUB>2</SUB>SnS<SUB>3</SUB> (CTS) thin films. After the coating, a subsequent sulfurizing process via rapid thermal annealing was performed. During the sulfurization, the Cu and Sn precursors in the hybrid inks exist in complex forms with chelates and these complexes help to form the CTS thin films by controlling the reaction rate of the metal precursors. Additionally, even though the complexes with chelates were formed, the oxidation numbers of the metal precursors were affected by the ionization tendency of each metal in the hybrid inks to form the semiconducting CTS thin films. After obtaining the optimum sulfurizing condition by controlling the reaction pressure and temperature, the CTS thin films were characterized and CTS solar cells were fabricated under these conditions. The best conversion efficiency of the fabricated cells was 2.953% and the temperature-dependent photovoltaic performances were also examined to investigate the carrier transport mechanisms of the devices. According to admittance spectroscopy, the dominant defect energy level was determined as 0.09 eV above the valence band minimum, which accords with the copper vacancy (<I>V<SUB>Cu</SUB> </I>) level. In addition, capacitance–voltage measurements and drive-level capacitance profiling were applied to demonstrate the carrier densities and defect behaviors.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The chelating effect of metal-chelate complexes in hybrid ink can control reaction rate to form pure Cu<SUB>2</SUB>SnS<SUB>3</SUB> thin films. </LI> <LI> Metal-chelate complex helped to form pure Cu<SUB>2</SUB>SnS<SUB>3</SUB> by maintaining oxidation number of Cu and Sn. </LI> <LI> To investigate the carrier transport mechanisms, temperature-dependent As and DLCP analyses were conducted. </LI> <LI> The main defects were related to the <I>V<SUB>Cu</SUB> </I> acceptor. </LI> </UL> </P>