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Silicon TFTs at the Dawn of FPD Technology
Setsuo Usui 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.1
This article reviews the research and development of crystalline Si films of early days (1980s∼) conducted in laboratories. Thin film transistors (TFTs) for large-area devices, such as contact-type image sensors and flat panel displays, were extensively investigated using ZMR (zone melting recrystallization) or Ar-ion laser annealing. In search of SOI (silicon on insulator) on glass substrates, the excimer laser annealing method was introduced to manufacture LTPS (low temperature poly-Si) TFTs on low-cost glass substrates and TFTs with good characteristics emerged as a result of using LTPS. This technology still has many problems and issues, but is pushed forward aiming at the realization of LTSS (low temperature single-crystalline silicon) films.