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RISS 인기검색어
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- 저자 : Scuderi, A. (검색결과 3 건)
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Phenological cycle of three mango cultivars in the Mediterranean climate
Scuderi Dario,Gianguzzi Giuseppe,Priola Federico,Farina Vittorio 한국원예학회 2024 Horticulture, Environment, and Biotechnology Vol.65 No.3
Mango cultivation is expanding at latitudes further away from the equator. It is necessary to describe the behaviour of the species in response to the new environmental conditions and cultivation techniques it undergoes. Three years of phenological observations on mango (cvs. Keitt, Osteen, Tommy Atkins) grown in open air and greenhouse orchards located in Sicily, Italy, were clustered and synthesized into the main phenological phases of the species’ annual cycle, together with their duration. An accurate depiction of the environmental conditions and of the phenological phases on the mango tree throughout the year in the Mediterranean climate is presented. All three cultivars behaved similarly, and diff erences have emerged between the phenological cycle of mango in the Mediterranean and the one of its traditional cultivation areas: vegetative fl ushes in the open air happen after fl owering rather than after harvest and are less intense. Flowering is consistently anticipated in the greenhouse with respect to open air, beginning before the end of winter, but this does not refl ect in an earlier harvest. Mango trees in the open air remain quiescent for many months, while in the greenhouse the fruit development period is prolonged by the high temperatures. The description of the phenological cycle of mango in two diff erent cropping conditions in the Mediterranean climate constitutes a reference for growers and researchers interested in the adaptation of the species to different growing conditions and allows to reconsider the thresholds for its cultivation.
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High Power Digitally-Controlled SOI CMOS Attenuator With Wide Attenuation Range
Jinho Jeong,Pornpromlikit, Sataporn,Scuderi, Antonino,Presti, Calogero,Asbeck, Peter IEEE 2011 IEEE microwave and wireless components letters Vol.21 No.8
<P>An attenuator is presented in a 0.13 μm silicon-on-insulator (SOI) CMOS technology, to be used for power control of RF wireless transmitters. The design is based on a T-network consisting of two series switches and 63 shunt switches. A gate switching technique is utilized in the series switches for high power handling and high isolation. Measurements at 1.88 GHz show that the minimum insertion loss is as low as 0.6 dB and maximum attenuation is 55.3 dB with worst input return loss of 8.1 dB. The attenuation can be digitally controlled in steps of around 1 dB. The 1 dB gain compression point is as high as 21.0 dBm in the through mode.</P>
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Myoungbo Kwak,Kimball, D. F.,Presti, C. D.,Scuderi, A.,Santagati, C.,Yan, J. J.,Asbeck, P. M.,Larson, L. E. IEEE 2012 IEEE transactions on microwave theory and techniqu Vol.60 No.6
<P>A high-performance bipolar-CMOS-DMOS (BCD) monolithic envelope amplifier for micro-base-station power amplifiers (PAs) is presented. Measurement of the BCD high-voltage (<I>V</I><SUB>DD</SUB> = 15 V) envelope amplifier shows an efficiency of 72% using 7.7-dB peak-to-average ratio WCDMA input signals at an average envelope amplifier output power above 3 W. A WCDMA envelope-tracking RF PA at 2.14 GHz, including a GaN field-effect transistor RF stage, has an overall drain efficiency above 51%, with a normalized power root-mean-square error below 1.2% and an adjacent channel leakage ratio of -49 dBc at 5-MHz offset using memory-effect mitigation digital pre-distortion, at an average output power above 2 W and a gain of 10 dB.</P>
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