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        Effect of the Edible Mushroom Mycoleptodonoides aitchisonii on Transient Global Ischemia-Induced Monoamine Metabolism Changes in Rat Cerebral Cortex

        Satoshi Okuyama,Kyoko Tashiro,Nien Vinh Lam,Tamiko Hatakeyama,Takehiko Terashima,Hidehiko Yokogoshi 한국식품영양과학회 2012 Journal of medicinal food Vol.15 No.1

        We performed a transient bilateral common carotid artery occlusion on rats and investigated whether feeding an aqueous extract of Mycoleptodonoides aitchisonii, an edible mushroom, affected metabolism of monoamines in the cerebral cortex, possibly protecting against ischemic damage. Seventeen days after the surgery, concentrations of the dopamine (DA) metabolite 3,4-dihydroxyphenylacetic acid (DOPAC) and of homovanillic acid (HVA) in the cerebral cortex of the M. aitchisonii–fed group (MV) were higher than in the control ischemia (CV) group. The turnover rate of DA, which was indicated by (DOPAC + HVA)/DA, for the CV group was significantly lower than for the MV group, and the MV group value was the same rate as the sham-operated group. These data indicate that M. aitchisonii affects the dopaminergic neuronal system following brain ischemia damage in the cerebral cortex.

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        Improvement of Ti-Plasma Coating on Ni-Ti Shape Memory Alloy Applying to Implant Materials and its Evaluation

        Okuyama, Masaru,Endo, Jun,Take, Seisho,Itoi, Yasuhiko,Kambe, Satoshi 한국부식방식학회 2002 Corrosion Science and Technology Vol.31 No.6

        Utilizing of Ni-Ti shape memory alloy for implant materials has been world-widely studied. It is, however, known that Ni-Ti alloy is easily attacked by chloride ion contained in body liquid. To prevent Ni dissolution, the authors tried to coat the alloy surface with titanium metal by means of plasma-spray coating method. The plasma coating films resulted in rather accelerating pitting corrosion because of their high porosity. Therefore, sealing of the porous films was required. In order to solve this problem and satisfy prolonged lifetime in the body, the authors tried to use the vacuum evaporation technique of titanium metal. Two types of Ti vacuum evaporation procedures were employed. The one was to cover a thin film on Ni-Ti alloy surface prior to massive Ti plasma spray coating. The other was to first coat plasma spray films on Ni-Ti alloy and then to cover them with vacuum evaporation films of Ti. Protective ability against pitting corrosion was examined by electrochemical polarization measurement in physiological solution and the coating films were characterized by microscopic and SEM observation and EPMA analysis. Vacuum evaporation thin films could not protect Ni-Ti alloy from pitting corrosion. In the case of plasma spray coating over the Ti vacuum evaporation thin film, the substrate Ni-Ti alloy could not be better protected. On the contrary, vacuum evaporation of Ti over the porous plasma spray coating layer remarkably improved corrosion protective performance.

      • Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrOx insulator layer

        Noda, Minoru,Kodama, Kazushi,Kitai, Satoshi,Takahashi, Mitsue,Kanashima, Takeshi,Okuyama, Masanori The Korean Institute of Electrical and Electronic 2003 전기전자재료 Vol.16 No.9

        A metal-ferroelectric [SrBi$_2$Ta$_2$O$\_$9/ (SBT)-high-k-insulator(PrOx)-semiconductor(Si) structure has been fabricated and evaluated as a key part of metal-ferroelectric-insulator-semiconductor-field-effect-transistor MFIS-FET memory, aiming to improve the memory retention characteristics by increasing the dielectric constant in the insulator layer and suppressing the depolarization field in the SBT layer. A 20-nm PrOx film grown on Si(100) showed both a high of about 12 and a low leakage current density of less than 1${\times}$ 10e-8 A/$\textrm{cm}^2$ at 105 MV/cm. A 400-nm SBT film prepared on PrOx/Si shows a preferentially oriented (105) crystalline structure, grain size of about 130 nm and subface roughness of 3.2 nm. A capacitance-voltage hysteresis is confirmed on the Pt/SBT/PrOx/Si diode with a memory window of 0.3V at a sweep voltage width of 12 V. The memory retention time was about 1 104s, comparable to the conventional Pt/SBT/SiO$\_$x/N$\_$y/(SiO$\_$N/)/Si. The gradual change of the capacitance indicates that some memory degradation mechanism is different from that in the Pt/SBT/SiON/Si structure.

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