http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Melvin John F. Empizo,Kohei Yamanoi,Kazuhito Fukuda,Ren Arita,Yuki Minami,Toshihiko Shimizu,Nobuhiko Sarukura,Tsuguo Fukuda,Alexandra B. Santos-Putungan,Ray M. Vargas,Arnel A. Salvador,Roland V. Sarma 한양대학교 세라믹연구소 2015 Journal of Ceramic Processing Research Vol.16 No.1
Photoluminescence properties of bulk and microstructured ZnO crystals are investigated for potential scintillator applications. A bulk crystal is prepared by hydrothermal method, while hexagonal micron-sized crystals are prepared by aqueous chemical growth and carbothermal reduction methods. The bulk sample exhibits UV emission only, while the microstructured samples exhibit both UV and visible emissions. The ZnO microstructures have faster near-band edge emission lifetimes of 100 to 800 ps compared to 440 ps and 2 ns of bulk ZnO. No direct correlation between the defect-related emissions and the near-band edge emission has been observed. ZnO microstructures with fast luminescence lifetimes have promising applications as EUV lithography and XFELs scintillators.
Shogo Maeda,Shinsaku Kawabata,Itsuki Nagase,Ali Baratov,Masaki Ishiguro,Toi Nezu,Takahiro Igarashi,Kishi Sekiyama,Suguru Terai,Keito Shinohara,Melvin John F. Empizo,Nobuhiko Sarukura,Masaaki Kuzuhara 대한전자공학회 2024 Journal of semiconductor technology and science Vol.24 No.1
We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measured capacitance-voltage characteristics, suggesting improved Al2O3/AlGaN interface. For corresponding three-terminal transistors, while the conventional reference device exhibited poor control of gate-to-source voltage on drain current with about 3 V hysteresis in the transfer curves, the proposed device showed well-behaved subthreshold characteristics with only 0.8 V hysteresis. Furthermore, the proposed device showed a much higher VTH of +5 V compared to +1 V of the conventional reference device.