http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Sadhu Kolekar,Shashikant P. Patole,Ji‑Beom Yoo,Chandrakant V. Dharmadhikari 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.2
Field emission from nanostructured films is known to be dominated by only small number of localized spots which varieswith the voltage, electric field and heat treatment. It is important to develop processing methods which will produce stableand uniform emitting sites. In this paper we report a novel approach which involves analysis of Proximity Field EmissionMicroscopic (PFEM) images using Scanning Probe Image Processing technique. Vertically aligned carbon nanotube emittershave been deposited on tungsten foil by water assisted chemical vapor deposition. Prior to the field electron emission studies,these films were characterized by scanning electron microscopy, transmission electron microscopy, and Atomic ForceMicroscopy (AFM). AFM images of the samples show bristle like structure, the size of bristle varying from 80 to 300 nm. The topography images were found to exhibit strong correlation with current images. Current–Voltage (I–V) measurementsboth from Scanning Tunneling Microscopy and Conducting-AFM mode suggest that electron transport mechanism in imagingvertically grown CNTs is ballistic rather than usual tunneling or field emission with a junction resistance of ~10 kΩ. It wasfound that I–V curves for field emission mode in PFEM geometry vary initially with number of I–V cycles until reproducibleI–V curves are obtained. Even for reasonably stable I–V behavior the number of spots was found to increase with the voltageleading to a modified Fowler–Nordheim (F–N) behavior. A plot of ln(I/V3) versus 1/V was found to be linear. Currentversus time data exhibit large fluctuation with the power spectral density obeying 1/f2 law. It is suggested that an analogueof F–N equation of the form ln(I/Vα) versus 1/V may be used for the analysis of field emission data, where α may depend onnanostructure configuration and can be determined from the dependence of emitting spots on the voltage.