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RISS 인기검색어
- 검색키워드
- 저자 : S. Varadharajaperumal (검색결과 2 건)
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K. Narayan,S. Varadharajaperumal,G. Mohan Rao,M. Manoj Varma,T. Srinivas 한국물리학회 2013 Current Applied Physics Vol.13 No.1
In this paper we present the effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes (OLEDs). A number of OLED devices have been fabricated with combinations of hole injecting and hole blocking layers of varying thicknesses. Even though hole blocking and hole injection layers have opposite functions, yet there is a particular combination of their thicknesses when they function in conjunction and luminous efficiency and power efficiency are maximized. The optimum thickness of CuPc (Copper(II) phthalocyanine) layer, used as hole injection layer and BCP (2,9 dimethyl-4,7-diphenyl-1,10-phenanthroline) used as hole blocking layer were found to be 18 nm and 10 nm respectively. It is with this delicate adjustment of thicknesses, charge balancing is achieved and luminous efficiency and power efficiency were optimized. The maximum luminous efficiency of 3.82 cd/A at a current density of 24.45 mA/cm2 and maximum power efficiency of 2.61 lm/W at a current density of 5.3 mA/cm2 were achieved. We obtained luminance of 5993 cd/m2 when current density was 140 mA/cm2. The EL spectra was obtained for the LEDs and found that it has a peaking at 524 nm of wavelength.
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Chinnaiyah Sripan,Devarajan Alagarasan,S. Varadharajaperumal,R.Ganesan,Ramakanta Naik 한국물리학회 2020 Current Applied Physics Vol.20 No.8
The well-known quaternary Cu2ZnSnS4 (CZTS) chalcogenide thin films are playing an important role in modern technology. The CZTS nanocrystal were successfully prepared by solution method using water, ethylene glycol and ethylenediamine as different solvent. The pure phase material was used for thin film coating by thermal evaporation method. The prepared CZTS thin films were characterized by XRD, Raman spectroscopy, FESEM, XPS and FT-IR spectroscopy. The XRD and Raman spectroscopy analysis revealed the formation of polycrystalline CZTS thin film with tetragonal crystal structure after annealing at 450 °C. The oxidation state of the annealed film was studied by XPS. A direct band gap about 1.36 eV was estimated for the film from FT-IR studies, which is nearly close to the optimum value of band gap energy of CZTS materials for best solar cell efficiency. The CZTS annealed thin films are more suitable for using as a p-type absorber layer in a low-cost solar cell.
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