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Microscopic control ofSi29nuclear spins near phosphorus donors in silicon
Jä,rvinen, J.,Zvezdov, D.,Ahokas, J.,Sheludyakov, S.,Vainio, O.,Lehtonen, L.,Vasiliev, S.,Fujii, Y.,Mitsudo, S.,Mizusaki, T.,Gwak, M.,Lee, SangGap,Lee, Soonchil,Vlasenko, L. American Physical Society 2015 Physical review. B, Condensed matter and materials Vol.92 No.12
T. Ohnishi,S. Mizusaki,M. Naito,Y. Nagata,M. Itou,Y. Sakurai,T. C. Ozawa,Y. Noro,H. Samata 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.12
The crystallographic, magnetic and transport properties of Sr1−xCaxRu0.5Mn0.5O3 were studiedto reveal the effects of crystal symmetry on the magnetism and the transport properties of antiferromagneticSrRu1−yMnyO3 (y > 0.2). The Ca-content dependences of the lattice constants and volumesuggest that the mixed valence state of Mn3+, Mn4+, Ru4+, and Ru5+ ions in SrRu0.5Mn0.5O3is held for Ca substitution. However, a structural transformation from tetragonal to orthorhombicsymmetry occurs at a Ca content of x 0.2, and a ferromagnetic state appears simultaneously. The Weiss temperature of all samples has a positive value regardless of the magnetic state. Theresistivity decreases as the Ca content increases, and the high temperature part of the resistivitycould be fitted by using the variable range hopping (VRH) model. The localization length increasesas soon as ferromagnetism appears. The Curie temperature seems to depend on the distance betweentransition metal ions. The antiferromagnetic state was explained by using the competitionbetween a ferromagnetic interaction along the c-axis and an antiferromagnetic interaction in theab-plane, and the orthorhombic ferromagnetic state was explained by using a three-dimensionalferromagnetic interaction between Mn ions.
Phonon echoes in Si:P at very low temperature
Jeong, M,Song, M,Ueno, T,Mizusaki, T,Matsubara, A,Lee, S Institute of Physics 2009 Journal of physics. Conference series Vol.150 No.4
<P>We observed phonon echoes in P-doped Si (Si:P) at very low temperatures. We applied two radio-frequency pulses separated by a time delay of τ on Si:P and observed echo signal at <I>t</I> &equal; 2τ in both insulating and metallic samples with varying dopant concentrations and of different sample forms of powders and bulk plates at temperature between 45 mK and 4 K. The echoes were much more pronounced in insulating powder samples than in metallic ones and in bulk ones. The echo intensity for a fixed τ increased very strongly as temperature was lowered but the echoes disappeared toward the superfluid-to-normal transition temperature of helium mixture in which the samples were immersed. We observed no appreciable change in the echo intensities as external magnetic field was varied up to 8 T. The echoes are interpreted to be dynamical polarization phonon echoes in piezoelectric powders of insulating Si:P with a dopant concentration <I>n</I> &equal; 6 x 10<SUP>17</SUP> cm<SUP>-3</SUP>.</P>