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Characterisation of polycrystalline gallium nitride grown by plasma-assisted evaporation
S. M. Durbin,V. J. Kennedy,S. I. Liem,R. J. Reeves,A. Markwitz,V. A. Christie 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
The remarkable success of GaN-based devices despite comparatively large defect densities has prompted many groups to explorepolycrystalline and amorphous GaN thin lms for various device applications. In this paper we present the results of a series of lmgrowths performed using an RF plasma assisted molecular beam epitaxy system. GaN lms were grown on quartz substrates in thetemperature range of 150650.C, and in all cases were found to be polycrystalline and largelyc-axis oriented. Rutherford back-scattering spectroscopy indicates lms have gallium-rich stoichiometry, except for those grown below 200.C. Bandedge photo-luminescence was observed at room temperature even for the lms grown at 150.C, and many lms exhibited a measurable changein resistivity under exposure to ultraviolet radiation.