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RISS 인기검색어
- 검색키워드
- 저자 : S. Dalui (검색결과 2 건)
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Phase growth control in low temperature PLD Co:TiO2 films by pressure
S. Rout,N. Popovici,S. Dalui,M.L. Paramês,R.C. da Silva,A.J. Silvestre,O. Conde 한국물리학회 2013 Current Applied Physics Vol.13 No.4
This paper reports on the structural and optical properties of Co-doped TiO2 thin films grown onto (0001)Al2O3 substrates by non-reactive pulsed laser deposition (PLD) using argon as buffer gas. It is shown that by keeping constant the substrate temperature at as low as 310 C and varying only the background gas pressure between 7 Pa and 70 Pa, it is possible to grow either epitaxial rutile or pure anatase thin films, as well as films with a mixture of both polymorphs. The optical band gaps of the films are red shifted in comparison with the values usually reported for undoped TiO2, which is consistent with n-type doping of the TiO2 matrix. Such band gap red shift brings the absorption edge of the Codoped TiO2 films into the visible region, which might favour their photocatalytic activity. Furthermore,the band gap red shift depends on the films’ phase composition, increasing with the increase of the Urbach energy for increasing rutile content.
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Co and (Co,Mo) doping effects on the properties of highly reduced TiO2 anatase thin films
A.J. Silvestr,S. Rout,S. Dalui,L.C.J. Pereira,A.S. Viana,O. Conde 한국물리학회 2017 Current Applied Physics Vol.17 No.2
This work reports on the structural, optical, electrical and magnetic properties of Co:TiO2 and (Co,Mo):TiO2 anatase thin films grown onto (0001) sapphire substrates by Pulsed Laser Deposition in highly reducing conditions and at a low temperature of 350 C. Undoped TiO2d as well as doped films with nominal compositions of Ti0.95Co0.05O2d, Ti0.94Co0.05Mo0.01O2d, and Ti0.92Co0.05Mo0.03O2d were studied. They all show similar microstructures, with smooth surfaces and RMS roughness values less than 0.5 nm. The optical band gap energies of the doped films are red shifted with respect to that deduced for the undoped TiO2d. The correlation between the band gaps and the Urbach energies of the films is discussed. All samples show semiconductor behavior with n-type conduction. The Co:TiO2 sample is ferromagnetic with a saturation magnetization of 1.3 mB/Co, a high electrical conductivity of 123 S cm1 and a carrier density of 1.88 1021 cm3 at room temperature. The ferromagnetic order of the Co:TiO2 system is suppressed when carriers are added by codoping with Mo.
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