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- 저자 : Roccaforte, F. (검색결과 1 건)
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Spera, M.,Corso, D.,Di Franco, S.,Greco, G.,Severino, A.,Fiorenza, P.,Giannazzo, F.,Roccaforte, F. Elsevier 2019 Materials science in semiconductor processing Vol.93 No.-
<P><B>Abstract</B></P> <P>This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminum (Al) at different energies (30–200 keV) were carried out to achieve 300 nm thick acceptor box profiles with a concentration of about 10<SUP>20</SUP> at/cm<SUP>3</SUP>. The implanted samples were annealed at high temperatures (1675–1825 °C). Morphological analyses of the annealed samples revealed only a slight increase of the surface roughness RMS up to 1775 °C, while this increase becomes more significant at 1825 °C (RMS = 1.2 nm). Room temperature Hall measurements resulted in a hole concentration in the range 0.65–1.34 × 10<SUP>18</SUP>/cm<SUP>3</SUP> and mobility values in the order of 21–27 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP>. The temperature dependent electrical measurements allowed to estimate an activation energy of the Al-implanted specie of about 110 meV (for the post-implantation annealing at 1675 °C) and a fraction of active p-type Al-dopant ranging between 39% and 56%. The results give useful indications for the fabrication of 4H-SiC JBS and MOSFETs.</P>
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