RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      선택해제

      오늘 본 자료

      • 오늘 본 자료가 없습니다.
      더보기
      • 무료
      • 기관 내 무료
      • 유료
      • KCI등재

        DC and RF Performance Analysis of Extended Field Plated AlGaN/GaN/β-Ga2O3 HEMT

        R. Karpagam,S. Leones Sherwin Vimalraj,G. K. Sathishkumar,V. Megala,Y. Gowthami,B. Balaji 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.5

        In this work, High Electron Mobility Transistor is grown on various Substrates such as silicon (Si), silicon carbide (SiC), and sapphire substrate to exhibit a negative threshold voltage, whereas grown on β-gallium oxide (β-Ga2O3) to exhibit a positive threshold voltage. The optimization is done by using the pi-shaped gate and filed plate towards the drain and triple tooth metal for the proposed structure. In this, work Al0.8Ga0.2 N /AlN /GaN /AlN /Al0.4Ga0.6 N /GaN /AlN / Al0.8Ga0.2 N / β-Ga2O3 HEMT is proposed to improve the breakdown voltage, subthreshold swing. Β-Ga2O3 is prominent material to reduce the leakage current in the structure. It is observed from the obtained results that the Breakdown voltage for Si is 15 V, SiC is 20 V, Sapphire is 114 V, β-Ga2O3 is 125 V,d Unilateral power gain of 21.12dB, 19.56dB, 18.9dB, 9.5dB, at 851 GHz, 774 GHz, 738 GHz, 318 GHz when the proposed structure is grown on β-Ga2O3, SiC, Sapphire, Si substrates. In the proposed HEMT there is a compromise between frequency and breakdown voltage. If one factor improves the other reduces. But by using β-Ga2O3 as a substrate the achievement of both factors is possible. This is possible because of properly layering hetero-materials with matched lattice constant. β-Ga2O3 is a material that is a trend in the market and which resulted in intensive research. In the proposed structure Ferroelectric material i.e. lead Zirconate titanate oxide (PbZrTiO3) is used as a gate to reduce the power consumption and to increase the storage capacity in a unit area. Ferroelectric materials possess elevated dielectric constant and it has the capability of storing more charge per unit area when compared to other materials. In the small area, this material can store more data with low power consumption.

      • KCI등재

        Dynamic performance improvement of PMSM drive using fuzzy‑based adaptive control strategy for EV applications

        S. Suganthi,R. Karpagam 전력전자학회 2023 JOURNAL OF POWER ELECTRONICS Vol.23 No.3

        The permanent magnet synchronous motor (PMSM) is the heart of the electric drive system in electric vehicle technology. The effects of load variation and motor parameter changes are the important key challenges, which deteriorate the dynamicperformances of interior PMSM (IPMSM) drives. To overcome these issues, this study suggests the development of anefficient new control drive system by integrating the Model Reference Adaptive Control (MRAC) with a fuzzy logic controller (FLC) using a finite-element model optimized motor model. The proposed cascaded system comprises two loops: a main outer loop that runs MRAC to mitigate the effects of load variation, and a secondary inner loop with FLC for resilient performance against parametric fluctuations of the IPMSM drive system. The proposed controller uses the hybrid space vector pulse width modulation technique to regulate the switching components of the inverter. It also reduces total harmonic distortion (THD) and torque ripple during the startup of the motor. The overall examination of the PMSM drive system is accomplished by co-simulation using MATLAB and Simcenter MAGNET software. The simulated results demonstrate the superiority of the proposed fuzzy adaptive controller in terms of higher maximum torque and improved speed tracking accuracy. A prototype of the proposed PMSM is developed and validated by experiment, which shows the robustness of the proposed methodology against load and speed fluctuations by reducing THD and torque ripples.

      연관 검색어 추천

      이 검색어로 많이 본 자료

      활용도 높은 자료

      해외이동버튼