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RISS 인기검색어
- 검색키워드
- 저자 : R. Amiruddin (검색결과 2 건)
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Role of p-NiO electron blocking layers in fabrication of (P-N):ZnO/Al:ZnO UV photodiodes
R. Amiruddin,M.C. Santhosh Kumar 한국물리학회 2016 Current Applied Physics Vol.16 No.9
We report the fabrication and characterization of ZnO-based UV photodiodes with p-NiO as an intermediate electron blocking layer (EBL). The n-ZnO and p-ZnO layers are deposited by automated spray pyrolysis technique and NiO layers by r.f.magnetron sputtering. For the realization of p-ZnO, dual acceptor method has been adopted by doping equimolar concentration of group-V elements P and N (0.75 at%) simultaneously in ZnO. The formation of p-type characteristics in ZnO is confirmed by Hall measurement and X-ray photoelectron spectroscopy (XPS) analysis. The n-ZnO is doped with Al (3 at%) in order to improve the electrical properties. The properties of sputtered NiO layers have been investigated under three different deposition temperatures of 300 C, 350 C and 400 C. By analyzing structural and electrical properties, it is revealed that NiO deposited at 350 C possess better crystallinity and electrical properties. The optimum p-ZnO and n-ZnO layers are stacked upon ITO substrates to form ZnO-based p-n junctions. The effect of addition of NiO as an electron blocking layer (EBL) between the p-n junctions is investigated by analyzing the current density-voltage (J-V) and UV photoresponse properties. The fabricated ZnO-based UV photodiodes with NiO EBL exhibits a high photoresponsivity (R) value of 5.53 A/ W with external quantum efficiency (EQE) value of 1.87 103%.
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Kossar Shahnaz,Amiruddin R.,Rasool Asif,Kumar M.C. Santhosh,Katragadda Nagamalleswari,Mandal Pranab,Ahmed Nafis 한국물리학회 2022 Current Applied Physics Vol.39 No.-
The present work reports on resistive switching (RS) characteristics of Neodymium (Nd)-doped bismuth ferrite (BFO) layers. The Nd (2–10 at%) doped BFO thin film layers were deposited using a spray pyrolysis method. The structural analysis reveals that a higher Nd doping concentration in BFO leads to significant distortion of the prepared Nd:BFO thin films from rhombohedral to tetragonal characteristics. The morphological analysis shows that all the deposited Nd:BFO thin films have regularly arranged grains. The X-ray photoelectron spectroscopy (XPS) analysis reveals that the prepared Nd:BFO thin films have a higher Fe 3+/Fe 2+ratio and less oxygen vacancy (VO) defects which enriches the ferroelectric characteristics in Nd:BFO layers. The polarization-electric field (P-E) and RS characteristics of the fabricated Nd:BFO-based RS device were examined. It was observed that the Nd (7 at%) doped BFO RS device shows large remnant polarization (P r) of 0.21 μC/cm2 and stable RS characteristics.
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