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      • SCISCIESCOPUS

        Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers

        Ooi, Poh Choon,Lin, Jian,Kim, Tae Whan,Li, Fushan Elsevier 2016 ORGANIC ELECTRONICS Vol.32 No.-

        <P><B>Abstract</B></P> <P>Indium-tin-oxide (ITO) free, nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between polymethylsilsesquioxane (PMSSQ) layers were fabricated directly on polyethylene terephthalate (PET) substrates by using a solution process technique. Current-voltage (<I>I-V</I>) curves for the silver nanowire/PMSSQ/GQD/PMSSQ/poly(3,4-ethylenethiophene):poly(styrene sulfonate)/PET devices at 300 K showed a current bistability. The ON/OFF ratio of the current bistability for the NVM devices was as large as 1 × 10<SUP>4</SUP>, and the cycling endurance time of the ON/OFF switching for the NVM devices was above 1 × 10<SUP>4</SUP> s. The Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and space-charge-limited current were dominantly attributed to the conduction mechanisms for the fabricated NVM devices based on the obtained <I>I-V</I> characteristics, and energy band diagrams illustrating the “writing” and the “erasing” processes of the devices.</P> <P><B>Highlights</B></P> <P> <UL> <LI> ITO-free, two-terminal, MIM, NVM devices containing GQDs sandwiched between PMSSQ layers were fabricated by using a simple solution process. </LI> <LI> <I>I-V</I> curves for the Ag NW/PMSSQ/GQD/PMSSQ/PEDOT:PSS/PET devices at 300 K showed a current bistability. </LI> <LI> ON/OFF ratio of the current bistability for the NVM devices was as large as 1 × 10<SUP>4</SUP>. </LI> <LI> Cycling endurance time of the ON/OFF switching for the NVM devices was above 1 × 10<SUP>4</SUP> s. </LI> <LI> Schottky and PF emissions, TCLC, and SCLC were the dominant carrier transport mechanisms for the MIM, NVM device. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

      • Room temperature pH-dependent ammonia gas sensors using graphene quantum dots

        Chen, Wei,Li, Fushan,Ooi, Poh Choon,Ye, Yun,Kim, Tae Whan,Guo, Tailiang Elsevier 2016 Sensors and actuators. B, Chemical Vol.222 No.-

        <P><B>Abstract</B></P> <P>We report a simple solution-process route to realize ammonia (NH<SUB>3</SUB>) gas sensor based on graphene quantum dots (GQDs). Transmission electron microscopy analysis confirmed that the 8–10nm GQDs were formed from multi-walled carbon nanotubes by using ultrasonication treatment. The as-fabricated gas sensor showed promising selectivity response when expose to NH<SUB>3</SUB> ambient at room temperature. It is indicated that by adjusting the pH value of the aqueous GQDs in acidic and neutral, two types of gas sensors with contrary current responses could be obtained, which might be resulted from quantum confinement, edge effects and presence of functional groups on GQDs.</P> <P><B>Highlights</B></P> <P> <UL> <LI> We report an NH<SUB>3</SUB> gas sensor at room temperature based on graphene quantum dots. </LI> <LI> GQDs were formed from multi-walled carbon nanotubes by ultrasonication treatment. </LI> <LI> Adjusting the pH value of the GQDs can lead to gas sensors with different behavior. </LI> <LI> Sensing mechanism might be resulted from the unique properties of GQDs. </LI> </UL> </P>

      • KCI등재

        Effect of β-Chain Alignment Degree on the Performance of Piezoelectric Nanogenerator Based on Poly(Vinylidene Fluoride) Nanofiber

        Khatatbeh Ibtehaj,Mohammad Hafizuddin Hj Jumali,Sameer Al-Bati,Poh Choon Ooi,Bandar Ali Al-Asbahi,Abdullah Ahmed Ali Ahmed 한국고분자학회 2022 Macromolecular Research Vol.30 No.3

        This work demonstrated the effect of the β-chain alignment degree on piezoelectric nanogenerator (PNG) performance. A simple, safe and low-cost fastcentrifugal spinning technique was used to produce self-poled poly(vinylidene fluoride) (PVDF) nanofiber. PNG based on acetone-prepared PVDF fibers, with high β-chain alignment, generated output open-circuit voltage (VOC) and short-circuit current (ISC) five times higher than the film counterpart. In addition, the fibers showed a remarkable increase in β-chain alignment degree as the ratio of N,N-dimethylformamide (DMF) solvent increased. The optimum nanofiber with the highest β-chain alignment degree, β-fraction and piezoelectric charge coefficient of 0.93, 91.8% and -120 pC.N-1 was obtained, respectively. PNG based on the optimum fiber displayed the highest VOC, ISC and power density of 14 V, 1.4 μA and 6.7 μWcm-2, respectively. This performance is greater than any PNG made from electrospun PVDF fiber. The excellent performance of the fabricated PNGs was strongly related to the high alignment degree of β-chains parallel along the fiber axis. In addition, due to low Young’s modulus (1.63 MPa) of the optimum fibers, the related lead-free PNG is sensitive to small movements and can be used in wearable and implanted medical devices.

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