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Electron Heating and Current Scaling in a GaAs Two-Dimensional Electron System
Po Zhung Chen,Li-Hung Lin,C.T. Liang,D.A. Ritchie,Jing-Han Chen,Jyunn-Ying Lin,M.Y. Simmons 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
We present experimental results on hot-carrier phenomena in a GaAs/AlGaAs two-dimensional electron system in the integer and fractional quantum Hall regions. In the integer region at low magnetic fields, a relationship $T_e$ $\sim$ $I^{0.52}$ between the effective carrier temperature $T_e$ and the source-drain current $I$ is obtained from Shubnikov-de Haas (SdH) oscillations at several magnetic fields, 0.2 $\sim$ 0.5 T, and currents, 0.1 $\sim$ 4 $\mu$A. These results are in agreement with results obtained in the current-dependent broadening of resistance peaks in the quantum Hall region of spin-split Landau levels. However, in the fractional region for the filling factor $\nu = 5/3 (B = 7$ T), a power law relationship $T_e$ $\sim$ $I^{0.37}$ is obtained. The difference in exponent may be due to different energy relaxation mechanisms between these two regions.