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P. Chithra lekha,M. Balaji,S. Subramanian,D. Pathinettam Padiyan 한국물리학회 2010 Current Applied Physics Vol.10 No.2
The polyoxomolybdates encapsulated PAni hybrid materials are prepared by interfacial polymerisation. In P12MPA, the crystal structure of 12MPA is not modified on doping with PAni. However, P11MPA have the polycrystallinity due to the presence of vanadium in the dopant molecule. Though, the hybrids prepared by interfacial polymerisation are in emaraldine salt form, there is a blue shift in the absorption spectra due to dopant induced decrease in conjugation length and over-oxidation. Interfacially polymerised PAniPOM hybrid materials are exposed with various concentrations of vapours of different volatile organic compounds (VOC) such as acetone, methanol, chloroform and carbon tetrachloride. The oxidising VOCs like acetone and methanol on exposure to PAni decrease the resistivity by hydrogen bonding with the redox cites of the polymer. Among these two, the sensitivity towards acetone is more in PAni and its hybrids which can be linked with the vapour pressure of the analyte. Due to the weak acidic characteristics of chlorinated hydrocarbons which are reducing vapours, the resistivity of PAni and its hybrids increases on exposure to chloroform and CCl4. Here, the chlorinated hydrocarbons interact with the redox sites of PAni and reduce it to base form. Bridging of polymer chains is also proposed for the reduction of conductivity on exposure to the analyte. The sensitivity is higher for the reducing analytes than that of the oxidising one.
S. Subramanian,P. Chithra lekha,D. Pathinettam Padiyan 한국물리학회 2009 Current Applied Physics Vol.9 No.5
Structural, electrical and optical properties of polyaniline (PAni) doped Bi2S3 composite thin films prepared by electrodeposition method are reported. X-ray diffraction pattern indicates its polycrystalline nature and crystallite size increases with increase in the concentration of PAni. FTIR studies reveal that the dopant PAni has affected the absorption phenomenon in the IR region of the Bi2S3 thin films. The optical band gap energy is found to be 1.91 eV for as-deposited Bi2S3 thin film and it decreases with increase in the concentration of PAni. The morphology of the doped films changes due to the addition of PAni. in the concentration of PAni. The morphology of the doped films changes due to the addition of PAni. The conduction results from a hopping due to localized states in the temperature range 300–358 K. Above 358 K, the conduction process is explained by the traps at grain boundaries of partially depleted grains.
High-energy ion induced physical and surface modifications in antimony sulphide thin films
S. Subramanian,M. Balaji,P. Chithra Lekha,K. Asokan,D. Kanjilal,Indra Sulania,Jai Prakash,D. Pathinettam Padiyan 한국물리학회 2010 Current Applied Physics Vol.10 No.4
Sb2S3 thin films prepared by electrodeposition on indium tin oxide coated glass substrate were irradiated with 150 MeV Ni11+ ions for various fluence in the range of 1011–1013 ions/㎠. The modifications in the structure, surface morphology and optical properties have been studied as a function of ion fluence. X-ray diffraction (XRD) analysis indicates a shift in the (2 4 0) peak position towards lower diffraction angle and a decrease in grain size with increase in ion fluence. Presence of microcracks due to irradiation induced grain splitting effect has been observed from the SEM micrograph at higher ion fluence. The optical absorbance spectrum revealed a shift in the fundamental absorption edge and the band gap energy increased from a value of 1.63 eV for as-deposited films to 1.80 eV for the films irradiated with 1013 ions/㎠.