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Electrical and optical properties of Si-rich SiNx layers: Effect of annealing
P. Szollosi,P. Basa,,Cs Ducso,B Mate,M. Adam,T. Lohner,P. Petrik,B. Pecz,L. Toth,L. Dobos 한국물리학회 2006 Current Applied Physics Vol.6 No.2
In this study an investigation is presented on LPCVD deposited and annealed Si-rich SiNx layers on Si substrates. The samplestrical properties were studied as a function of annealing temperature. Systematic dependence of the at-band voltage and the currenthave been obtained on the annealing conditions.