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H. Odagawa,Y. Cho 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
A scanning nonlinear dielectric microscope (SNDM) probe, called the "311-type probe, and a system to measure the ferroelectric polarization component parallel to the surface using rotating electric eld have been developed. This is achieved by measuring the ferroelectric material's nonlinear dielectric constant "311 instead of "333, which is measured in conventional SNDM. Experimental results show that the probe can satisfactorily detect the direction of the polarization parallel to the surface, it can be applied to measure three-dimensional polarization vectors.@
Ferroelectric ultra high-density data storage based on scanning nonlinear dielectric microscopy
Cho, Ya-Suo,Odagawa, Nozomi,Tanaka, Kenkou,Hiranaga, Yoshiomi The Society of Information Storage Systems 2007 정보저장시스템학회논문집 Vol.3 No.2
Nano-sized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning non-linear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, we succeeded to form an smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/$inch^2$ and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date. Sub-nanosecond (500psec) domain switching speed also has been achieved. Next, long term retention characteristic of data with inverted domain dots is investigated by conducting heat treatment test. Obtained life time of inverted dot with the radius of 50nm was 16.9 years at $80^{\circ}C$. Finally, actual information storage with low bit error and high memory density was performed. A bit error ratio of less than $1\times10^{-4}$ was achieved at an areal density of 258 Gbit/inch2. Moreover, actual information storage is demonstrated at a density of 1 Tbit/$inch^2$.