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Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam Epitaxy
S. V. Ivanov,A. El-Shaer,M. Al-Suleiman,A. Bakin,A. Waag,O. G. Lyublinskaya,N. M. Shmidt,S. B. Listoshin,R. N. Kyutt,V. V. Ratnikov,A. Ya. Terentyev,B. Ya. Ber,T. A. Komissarova,L. I. Ryabova,D. R. Kh 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed. We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 − 400 ℃), slightly O-rich conditions, and post-growth annealing in the range of 650 − 800 ℃ results in efficient nitrogen pdoping with Hall hole concentration 3 × 1017 cm−3. The details of the structural and the electrical characterizations of the films are discussed.
CdSe Quantum Dots Embedded in a ZnCdSe Quantum Well: Towards Efficient Yellow Photoluminescence
I. V. Sedova,O. G. Lyublinskaya,S. V. Sorokin,S. V. Gronin,A. A. Sitnikova,S. V. Ivanov 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
This paper reports on studies of self-assembled CdSe quantum dot (QD) nanostructures grown by using molecular beam epitaxy in a ZnCdSe quantum well (QW) embedded in ZnSe barriers, which emit in the yellow spectral range (λ = 560 - 570 nm). An up to 180-meV long-wavelength shift of the photoluminescence peak energy, as compared to QDs of the same nominal thickness grown in a ZnSe matrix, was demonstrated. The reasons for that are a decrease in the barrier band gap and an increase in the exciton localization energy in CdSe QDs grown in a ZnCdSe QW. Transmission electron microscopy studies demonstrate an increase in the QD density along with the decreasing their lateral size and a narrowing of the size distribution.