http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
Engin Arslan,Semih Çakmakyapan,Özgür Kazar,Serkan Bütün,Sefer Bora Li esivdin,Neval A. Cinel,Gülay Ertas,Sükrü Ardal,Engin T ras,Jawad-ul-Hassan,E. Janzén,Ekmel Özbay 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.2
Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one highmobility carrier (3493 cm2/Vs at 300 K) and one low-mobility carrier (1115 cm2/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.