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- 저자 : Najafov, Hikmet (검색결과 2 건)
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Stability of EG cylindrical shells with shear stresses on a Pasternak foundation
A.M. Najafov,A. H. Sofiyev,D. Hui,Z. Karaca,V. Kalpakci,M. Ozcelik 국제구조공학회 2014 Steel and Composite Structures, An International J Vol.17 No.4
This article is the result of an investigation on the influence of a Pasternak elastic foundation on the stability of exponentially graded (EG) cylindrical shells under hydrostatic pressure, based on the first-order shear deformation theory (FOSDT) considering the shear stresses. The shear stresses shape function is distributed parabolic manner through the shell thickness. The governing equations of EG orthotropic cylindrical shells resting on the Pasternak elastic foundation on the basis of FOSDT are derived in the framework of Donnell-type shell theory. The novelty of present work is to achieve closed-form solutions for critical hydrostatic pressures of EG orthotropic cylindrical shells resting on Pasternak elastic foundation based on FOSDT. The expressions for critical hydrostatic pressures of EG orthotropic cylindrical shells with and without an elastic foundation based on CST are obtained, in special cases. Finally, the effects of Pasternak foundation, shear stresses, orthotropy and heterogeneity on critical hydrostatic pressures, based on FOSDT are investigated.
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Choi, Hyun Ho,Najafov, Hikmet,Kharlamov, Nikolai,Kuznetsov, Denis V.,Didenko, Sergei I.,Cho, Kilwon,Briseno, Alejandro L.,Podzorov, Vitaly American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.39
<P>Photoinduced charge transfer between semiconductors and gate dielectrics can occur in organic field-effect transistors (OFETs) operating under illumination, leading to a pronounced bias-stress effect in devices that are normally stable while operating in the dark. Here, we report an observation of a'polarization-dependent photoinduced bias-stress effect in two' prototypical single-crystal OFETs, based on rubrene and tetraphenylbis(indolo{l,2-alpha})quinolin. We find that the decay rate of the source-drain current in these OFETs under, illumination is a periodic function of the polarization angle of incident photoexcitation with respect to the crystal axes, with a periodicity of n. The angular positions of maxima and minima of the bias-stress rate match those of the optical absorption coefficient of the corresponding crystals. The analysis of the effect shows that it stems from a charge transfer of 'hot' holes, photogenerated in the crystal within a very short thermafization length (MLT mu m) from the semiconductor-dielectric interface. The observed phenomenon is a type of intrinsic structure-property relationship, revealing how molecular packing affects parameter drift in organic transistors under illumination. We also demonstrate that a photoinduced charge transfer in OFETs can be used for recording rewritable accumulation channels with an optically defined geometry and resolution, which can be used in a number of potential applications.</P>
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