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アァカサザタダナハバパマヤャラワヮンイィキギシジチヂニヒビピミリウゥクグスズツヅッヌフブプムユュルエェケゲセゼテデヘベペメレオォコゴソゾトドノホボポモヨョロヲ ―

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1
Novel Model for Film Formation in Plasma Processing

L. R. Shaginyan,J. G. Han,N. V. Britun 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
We present the results of a detailed investigation of the structure of metal films deposited from fluxes of energetic and thermalized sputtered atoms and the results of measurements of the surface temperature developing during condensation of the sputtered metal atoms. Variations in the film structure from fine-grained in the interface region to coarse-grained in the upper part of the film correlate with variations in the surface temperature measured by using an IR camera. The surface temperature being equal to the substrate temperature at the beginning of the deposition steeply increases and becomes several times higher than the substrate temperature at the end of the process. Based on these results, we developed a model explaining this effect. The basic feature of the model is the formation of a thin liquid-like hot layer, consisting of mobile atoms which exist during deposition, on the growth surface. According to the model, the film grows by a “gas!liquid!solid” rather than a “gas!solid” mechanism, which is realized provided that the film grows from energetic atoms.