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Zhou, Xiao,HUANG MINGHAO,천동필,현민 부경대학교 글로벌지역학연구소 2023 Journal of Global and Area Studies(JGA) Vol.7 No.2
The triple helix is an innovation ecology theory based on the spiral interactive innovation relationship among universities, industry, and government. The Triple Helix Model has been widely developed and applied in theory and practice. China’s semiconductor industry lags behind the world’s advanced level, especially in basic chip manufacturing. The backwardness of chip technology has become the “national intellectual manufacturing” neck technology. We collected and organized the literature related to semiconductors from China, the United States, Korea, Japan, and the Taiwan region in the three core databases of the WOS (Web of Science) from 1990 to 2020 and divided the authors’ fields by address. We used the triple helix algorithm based on information theory to calculate the mutual information of the semiconductor innovation ecosystems of these five countries or regions in two and three dimensions. We found that Japanese and U.S. triple helix overlay in the semiconductor industry had a higher level of self-organization than China. However, China’s had a strong dependence on international cooperation. Moreover, the typical U-I-driven model emerged from the two-dimensional perspective in the U.S. and Japan. In contrast, the U-G-driven model emerged in China, Korea, and the Taiwan region, and is particularly prominent in China.
Lufei Tian,Minghao Zhou,Xiaomei Pan,Guomin Xiao,Yunqing Liu 한국화학공학회 2015 Korean Journal of Chemical Engineering Vol.32 No.8
Supercritical (Sc)-CO2 extraction was adopted to extract ginkgolic (G.) acids from ginkgo biloba exopleura. Response surface optimization was employed to maximize extraction recovery of G. acids from ginkgo biloba exopleura. The effects of pressure, temperature, CO2 mass flow rate, dosage of entrainer and extraction static-dynamic time on the yield of G. acids were investigated in detail, and the central composite design was used to maximize the extraction recovery of G. acids. The amounts of G. acids were analyzed by HPLC with the mixture of methanol and acetic acid solution as the mobile phase. The optimal process parameters for sc-CO2 extraction were determined to be: 31.3MPa extraction pressure, 46.1 oC extraction temperature and 11.1 g min−1 CO2 flow rate, 30mL ethanol entrainer, 1 h extraction static time and 2 h dynamic time. Under the conditions of optical extraction process, the average G. acids extraction rate was 74mg g−1.
Selective hydrogenation of furfural to cyclopentanone over Cu-Ni-Al hydrotalcite-based catalysts
Hongyan Zhu,Guomin Xiao,Minghao Zhou,Zuo Zeng,Rui Xiao 한국화학공학회 2014 Korean Journal of Chemical Engineering Vol.31 No.4
A series of Cu-Ni-Al hydrotalcites derived oxides with a (Cu+Ni)/Al mole ratio of 3 with varied Cu/Nimole ratio (from 0.017 to 0.5, with a Cu ratio of 0.0125 to 0.25) were prepared by co-precipitation method, then appliedto the hydrogenation of furfural in aqueous. Their catalytic performance for liquid phase hydrogenation of furfural toprepare cyclopentanone was described in detail, considering reaction temperature, catalyst composition, reaction timeand so on. The yield of cyclopentanone was influenced by the mole ratio of Cu-Ni-Al based heterogeneous catalystand depended on the reaction conditions. The yield of cyclopentanone was up to 95.8% when the reaction was carriedout under 413 K with H2 pressure of 40 bar for 8 h. The catalysts were characterized by X-ray powder diffraction (XRD),scanning electron microscope (SEM) and H2 temperature-programmed reduction (H2-TPR).
Selective Contact Anneal Effects on Indium Oxide Nanowire Transistors using Femtosecond Laser
Kim, Seongmin,Kim, Sunkook,Srisungsitthisunti, Pornsak,Lee, Chunghun,Xu, Min,Ye, Peide D.,Qi, Minghao,Xu, Xianfan,Zhou, Chongwu,Ju, Sanghyun,Janes, David B. American Chemical Society 2011 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.115 No.34
<P>Nanowire materials have gained great interest as promising candidates for high-performance logic devices to sustain the progress in device scaling. However, little research has been conducted to investigate the role of contacts on the device performance accompanied by an appropriate physical model in nanodevices, although effects of the contacts will prevail as the channel scales. In this study, we investigate the effect of annealing using a femtosecond-laser focused at the contact region between the source-drain electrodes and the nanowire. On the basis of the direct comparison of device characteristics before and after annealing, a contact model is introduced, which could be generally applicable to nanowire transistors with overlap between gate region and source-drain regions. Low-frequency noise measurements in the devices reveal that the <I>I</I><SUB>d</SUB><SUP>2</SUP> normalized noise spectrum and Hooge’s constant are reduced following laser annealing.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2011/jpccck.2011.115.issue-34/jp203342j/production/images/medium/jp-2011-03342j_0004.gif'></P>
Lee, Chunghun,Srisungsitthisunti, Pornsak,Park, Sangphill,Kim, Seongmin,Xu, Xianfan,Roy, Kaushik,Janes, David B.,Zhou, Chongwu,Ju, Sanghyun,Qi, Minghao American Chemical Society 2011 ACS NANO Vol.5 No.2
<P>Transistors based on various types of nonsilicon nanowires have shown great potential for a variety of applications, especially for those that require transparency and low-temperature substrates. However, critical requirements for circuit functionality, such as saturated source-drain current and matched threshold voltages of individual nanowire transistors in a way that is compatible with low temperature substrates, have not been achieved. Here we show that femtosecond laser pulses can anneal individual transistors based on In<SUB>2</SUB>O<SUB>3</SUB> nanowires, improve the saturation of the source-drain current, and permanently shift the threshold voltage to the positive direction. We applied this technique and successfully shifted the switching threshold voltages of NMOS-based inverters and improved their noise margin, in both depletion and enhancement modes. Our demonstration provides a method to trim the parameters of individual nanowire transistors, and suggests potential for large-scale integration of nanowire-based circuit blocks and systems.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2011/ancac3.2011.5.issue-2/nn102723w/production/images/medium/nn-2010-02723w_0005.gif'></P>