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Liu, C.,Minari, T.,Xu, Y.,Yang, B.r.,Chen, H.X.,Ke, Q.,Liu, X.,Hsiao, H.C.,Lee, C.Y.,Noh, Y.Y. Elsevier Science 2015 ORGANIC ELECTRONICS Vol.27 No.-
We explore the device physics of thin film transistors (TFTs) with non-Ohmic contacts and develop a simple and fast method for evaluating the contact properties TFTs through output characteristics. Using one single output scan, the quantitative relationship between contact resistances and drain voltage were evaluated, revealing the property of interfacial injection at non-Ohmic contacts. This is demonstrated and validated in both TFT simulations and experiments employing inorganic and organic TFTs. The approach can be applied to general TFTs with arbitrary materials and configurations conveniently and enables faster and improved understanding of TFT operation and device physics.
Liu, Chuan,Liu, Xuying,Minari, Takeo,Kanehara, Masayuki,Noh, Yong-Young The Korean Infomation Display Society 2018 Journal of information display Vol.19 No.2
Recent studies on organic thin-film transistors (OTFTs) have reported high mobility values, but many of them showed non-ideal current-voltage characteristics that could lead to the overestimation of the mobility values. In this study, the non-ideal transistor behavior was briefly investigated by considering the effect of charge injection, and a method of overcoming the effect was developed. Correspondingly, various charge injection layers were developed, and their effects on the modification of metal contacts, including work function tuning and interfacial doping, were studied. The materials that had been coated formed a good metal-semiconductor interface through fine manipulation in the wetting and dewetting of the selected liquid. With such electrodes, the OTFTs were fabricated at room temperature and exhibited almost ideal transistor behavior in terms of the current-voltage characteristics, featuring high (over $10cm^2/Vs$) field-effect mobility.
K.Shinohara,Y.Minari,T.Irisa 전력전자학회 1992 ICPE(ISPE)논문집 Vol.1992 No.4
The voltage source inverter without dc link components does not have electrolytic capacitor and reactor (or resistor). The main circuit consists of inverter,rectifier and ac filter. The rectifier is the three phase bridge connections of 120° duration, and each diode has the antiparallel connected GTO for the reverse current flow path. This paper describes the analytical method and the calculated results on the stability of this system. The dc link voltage of the inverter takes immediately the influence of the ac source voltages. The stability analysis is performed by means of state variable method in consideration of the ac source voltages. In the equation of the small perturbations on the state variable from steady state, the stability is estimated by the dominant root in eigenvalues analysis. The stable and unstable characteristics with constant V/f control of induction motor are similar to the conventional voltage source inverter.<br/>
Ultra-high-resolution printing of flexible organic thin-film transistors
Xuying Liu,Masayuki Kanehara,Chuan Liu,Takeo Minari 한국정보디스플레이학회 2017 Journal of information display Vol.18 No.2
Fully printed electronics on plastic have attracted considerable interest owing to their high compatibility and ease of integration. Here, an ultra-high-resolution printing technique based on parallel vacuum ultraviolet patterning that can produce high-contrast wettability regions on flexible substrates was developed. This technique was used to selectively deposit a functional ink with a 1μm feature size, thereby allowing the large-scale fabrication of organic thin-film transistors with channels as short as 1μm under an ambient atmosphere. Moreover, in short-channel devices, hole injection barriers can be tuned by printing the optimum gate overlaps associated with selectively doping semiconductor/electrode interfaces, resulting in a marked reduction in contact resistance from 20 to 1.5, and an elevation of the charge carrier mobility to a record high of 0.3 cm2 V−1 s−1 in a 1-μm-channel device. The results indicate that the developed technique is promising for the fabrication of large-area, high-resolution, low-cost electronics.
Organic thin-film transistors with over 10 cm2/Vs mobility through low-temperature solution coating
Chuan Liu,Xuying Liu,Takeo Minari,Masayuki Kanehara,노용영 한국정보디스플레이학회 2018 Journal of information display Vol.19 No.2
Recent studies on organic thin-film transistors (OTFTs) have reported high mobility values, but many of them showed non-ideal current–voltage characteristics that could lead to the overestimation of the mobility values. In this study, the non-ideal transistor behavior was briefly investigated by considering the effect of charge injection, and a method of overcoming the effect was developed. Correspondingly, various charge injection layers were developed, and their effects on the modification of metal contacts, including work function tuning and interfacial doping, were studied. The materials that had been coated formed a good metal-semiconductor interface through fine manipulation in the wetting and dewetting of the selected liquid. With such electrodes, the OTFTs were fabricated at room temperature and exhibited almost ideal transistor behavior in terms of the current–voltage characteristics, featuring high (over 10 cm2/Vs) field-effect mobility.
Liu, C.,Xu, Y.,Liu, Z.,Tsao, H.N.,Mullen, K.,Minari, T.,Noh, Y.Y.,Sirringhaus, H. Elsevier Science 2014 Organic Electronics Vol.15 No.8
Solution-processed n-type organic field effect transistors (OFETs) are in need of proper metal contact for improving injection and mobility, as well as balanced hole mobility for building logic circuit units. We address the two distinct problems by a simple technique of transfer-printing. Transfer-printed Au contacts on a terrylene-based semiconductor (TDI) significantly reduced the inverse subthreshold slope by 5.6V/dec and enhanced the linear mobility by over 5 times compared to evaporated Au contacts. Hence, devices with a high-work-function metal (Au) are comparable with those with low-work-function metals (Al and Ca), indicating a fundamental advantage of transfer-printed electrodes in electron injection. We also transfer-printed a poly(3-hexylthiophene) (P3HT) layer onto TDI to construct a double-channel ambipolar transistor by a solution process for the first time. The transistor exhibits balanced hole and electron mobility (3.0x10<SUP>-3</SUP> and 2.8x10<SUP>-3</SUP>cm<SUP>2</SUP>V<SUP>-1</SUP>s<SUP>-1</SUP>) even in a coplanar structure with symmetric Au electrodes. The technique is especially useful for reaching intrinsic mobility of new materials, and enables significant enlargement of the material tanks for solution-processed functional heterojunction OFETs.