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RISS 인기검색어
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- 저자 : Matsuzaki Hideaki (검색결과 3 건)
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PC-766B' and PC-766B, 16-Membered Macrolide Angiogenesis Inhibitors Produced by Nocardia sp. RK97-56
KO, HACK-RYONG,KAKEYA, HIDEAKI,YOSHIDA, ARIKA,ONOSE, RIE,UEKI, MASASHI,MUROI, MAKOTO,TAKATSUKI, AKIRA,MATSUZAKI, HIROSHI,OSADA, HIROYUKI 한국미생물 · 생명공학회 2002 Journal of microbiology and biotechnology Vol.12 No.5
Angiogenesis is an essential event in a variety of physiological and pathological processes. Therefore, effective inhibition of event is a promising strategy for treating angiogenesis-related diseases, including cancer. The current study investigated two unique bafilomycin-type macrolide inhibitors of angiogenesis, PC-766B' (1) and PC-766B (2). The strain RK97-56 which produced the inhibitors was identified as Nocardia sp. by chemotaxonomic analyses, and the purification of the inhibitors was guided by their anti-angiogenic actives. PC-766B' (1) and PC-766B (2) exhibited potent inhibitory activities towards endothelial cell migration stimulated by the vascular endothelial growth factor(VEGF).
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Yun, Do-Young,Jo, Hyeon-Bhin,Son, Seung-Woo,Baek, Ji-Min,Lee, Jung-Hee,Kim, Tae-Woo,Kim, Dae-Hyun,Tsutsumi, Takuya,Sugiyama, Hiroki,Matsuzaki, Hideaki IEEE 2018 IEEE electron device letters Vol.39 No.12
<P>In this letter, we investigated the impact of the source-to-drain spacing ( <TEX>${L}_{\textsf {SD}}$</TEX>) on the dc and high-frequency characteristics of indium-rich In<SUB>0.8</SUB>Ga<SUB>0.2</SUB>As/In<SUB>0.52</SUB>Al<SUB>0.48</SUB>As high-electron mobility transistors (HEMTs) on a 3-in InP substrate. <TEX>${L}_{g} = \textsf {87}$</TEX> nm HEMTs with different values of <TEX>${L}_{\textsf {SD}}$</TEX> were fabricated ranging from 1.55 to <TEX>$0.8~\mu \text{m}$</TEX>, and their dc and RF responses were measured and analyzed in detail. In order to suppress the increase of the parasitic gate capacitance, we maintained the gate stem height as high as 200 nm in our device fabrication. Both the maximum transconductance (g<SUB>m_max</SUB>) and on-resistance ( <TEX>${R}_{\textsf {ON}}$</TEX>) improved as <TEX>${L}_{\textsf {SD}}$</TEX> scaled down to <TEX>$0.8~\mu \text{m}$</TEX>. At the same time, the high-frequency figures of the merit, such as current-gain cutoff frequency ( <TEX>${f}_{T}$</TEX>) and maximum oscillation frequency ( <TEX>${f}_{\textsf {max}}$</TEX>), increased with the reduction of <TEX>${L}_{\textsf {SD}}$</TEX>. These improvements are attributed to the reduction of series resistances. In particular, the <TEX>${L}_{g} =87$</TEX> nm device with an <TEX>${L}_{\textsf {SD}} = \textsf {0.8} \mu \text{m}$</TEX> exhibited an excellent combination of dc and RF characteristics, such as g<SUB>m_max</SUB> = 2.7 mS/ <TEX>$\mu \text{m}$</TEX>, <TEX>${R}_{\textsf {ON}} = \textsf {318}\,\,\Omega \cdot \mu \text{m}$</TEX>, <TEX>${f}_{T} = \textsf {519}$</TEX> GHz, and <TEX>${f}_{\textsf {max}} = \textsf {645}$</TEX> GHz, respectively. The results obtained in this letter indicate that the reduction of <TEX>${L}_{\textsf {SD}}$</TEX> down to <TEX>$0.8~\mu \text{m}$</TEX> continues to improve both the dc and RF characteristics of the InGaAs/InAlAs HEMTs, and a possible increase in parasitic capacitance components, associated with a T-shaped, is still negligible in our device architecture.</P>
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Lee In-Geun,Ko Dae-Hong,Yun Seung-Won,Kim Jun-Gyu,Jo Hyeon-Bhin,Kim Dae-Hyun,Tsutsumi Takuya,Sugiyama Hiroki,Matsuzaki Hideaki 한국물리학회 2021 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.78 No.6
Herein we describe theoretical and experimental analysis of the source resistance (Rs) components in In0.7Ga0.3As/ In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate. First, we analytically modeled Rs using a three-layer formula, separately modeling the regions of the ohmic contact, the gate-to-source access, and the side-recessed regions. The resistances of the ohmic contact and access regions were analyzed in a distributed-network manner with two different transfer lengths, whereas the resistance associated with the side-recess region near the gate edge was modeled by using a lumped element. To verify the accuracy of the proposed Rs model, we fabricated two different types of transmission-line-method (TLM) test patterns as well as long-channel In0.7Ga0.3As/ In0.52Al0.48As QW HEMTs, and compared their measured and modeled Rs. The modeled Rs was in excellent agreement with the measured Rs from the recessed TLM patterns and the long-channel HEMTs. Since the widths of the ohmic contact to the heavily doped In0.53Ga0.47As capping layer and the gate-to-source access region were typically much greater than corresponding transfer lengths ( L T_cap and L T_barrier ), those distributed networks could be simplified to a lumped-element based one-layer model, revealing that the tunneling resistance ( R barrier ) through the In0.52Al0.48As barrier should be carefully considered to minimize the Rs of InxGa1− xAs QW HEMTs together with S/D contact resistances and LGS.
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