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Effect of Pressure on the Intermediate-valence Semiconductor SmB6 : 11B-NMR
Kohei Nishiyama,Takeshi Mito,Ko-ichi Ueda,Takehide Koyama,Takao Kohara,Gabriel Prist´aˇs,Slavom´ır Gab´ani,Mari´an Reiffers,Karol Flachbart,Yasuhiro Komaki,Mitsutane Kokubu,Hideto Fukazawa,and Yoh Koh 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.62 No.12
We report the first high-pressure 11B-NMR studies above 3 GPa on the intermediate-valencesemiconductor SmB6. A 11B-NMR line obtained at 4.9 GPa, the highest pressure for the measurements,and at 1.9 K shows quite similar a line shape to that at ambient pressure, indicating nostructural or magnetic phase transition up to this pressure. The temperature dependence of thespin lattice relaxation rate 1/T1 at 4.9 GPa still exhibits an activation-type temperature dependencecharacteristic of semiconductors, which reveals an obvious decrease in the insulating gap byabout 30% compared to the gap at ambient pressure. The present experimental facts of a finiteinsulator gap and no magnetic order at 4.9 GPa are consistent with recent transport measurementsperformed under better hydrostatic pressures.