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RISS 인기검색어
- 검색키워드
- 저자 : M.M. Alkaisi (검색결과 4 건)
- 무료
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Multilevel nanoimprint lithography
M. M. Alkaisi,W. Jayatissa,M. Konijn 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
Multilevel and three-dimensional (3D)patterning eliminates more complicated steps in the fabrication processes of micro andnanoscale structures. Multiple lithography processes with inter-level alignment or single lithography with multi layer resist isessential for three-dimensional patterning. Nanoimprint lithography has demonstrated the potential of 3D patterning in a singlestep. A number of 3D structures have found immediate applications in a range of microelectronic systems such as microoptics,microelectromechanical systems, and monolithic microwave integrated circuits [Appl. Phys. Lett. 78 (2000)3322; Appl. Phys. Lett.79 (2001)2285]. In this work, electron beam lithography (EBL)with dierent doses followed by reactive ion etching (RIE)isemployed in the fabrication of multilevel structures of SixNy molds. The multi level patterns have been transferred into the mold insingle step RIE. The imprint process has been performed below the glass transition temperature of the polymer. This may alleviatethe alignment errors due to dierent thermal expansion coecients in various materials.
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Damage studies in dry etched textured silicon surfaces
M. M. Alkaisi,G. Kumaravelu,A. Bittar,D. Macdonald,J. Zhao 한국물리학회 2004 Current Applied Physics Vol.4 No.2-4
Surface texturing is a more permanent and eective solution to eliminate reections compared with antireection coatings inoptical devices. In this study texturing was performed using a reactive ion etching technique, reectance was measured and theresultant damage on the surfaces was monitored through the minority carrier lifetime measurements. High minority carrier lifetimeis an indication of low defect centres and is essential for maximum collection eciency. It is found that the reectance of the texturedcone structures is less than 0.4% at wavelengths from 500 to 1000 nm and shows a minimum of 0.29% at 1000 nm. while thereectivity from black silicon is around 1% and from hole structures is around 6.8% in the same wavelength range. The quasi-steady-state photo conductance technique was used to measure the eective carrier lifetimes of the textured samples, showing that chemicalwet etch damage removal is eective in improving the lifetime of the sample.
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Resist deformation at low temperature in nanoimprint lithography
K. Mohamed,M.M. Alkaisi,J. Smaill 한국물리학회 2006 Current Applied Physics Vol.6 No.3
In this work, the squeeze ow of thin polymethyl methacrylate (PMMA) lms into nanocavities has been investigated in order tounderstand and optimise the imprint process conditions. This work was focused primarily on the PMMA ow behaviour at temperaturesbelow the glass transition temperatureTg (<105 .C). The cavity and structure patterns were fabricated on silicon nitride molds. An ABA-temperatures well belowTg is attributed to high localized stresses imposed on the resist surface, which exceed the yield stress, and thick-ness dependentTg. The residual resist thickness is a function of pattern shape, size and initial resist thickness.
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A comparison of near-field lithography and planar lens lithography
D.O.S. Melville,R.J. Blaikie,M.M. Alkaisi 한국물리학회 2006 Current Applied Physics Vol.6 No.3
The resolution of a near-field lithography technique that uses a planar silver lens to form a near-field image has been investigated and compared with hard-contact lithography. Sub-diffraction-limited imaging has been observed through a 50 nm silver film, confirming a recent superlensing proposal [J.B. Pendry, Phys. Rev. Lett. 85 (2000) 3966], with grating periods down to 170 nm pitch being patterned into resist using simple broadband UV-illumination.
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